Taiwan semiconductor manufacturing company, ltd. (20240379529). METAL PLATE CORNER STRUCTURE ON METAL INSULATOR METAL simplified abstract
Contents
METAL PLATE CORNER STRUCTURE ON METAL INSULATOR METAL
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Yuan-Yang Hsiao of Taipei (TW)
Hsiao Ching-wen of Hsinchu (TW)
Yao-Chun Chuang of Hsinchu (TW)
METAL PLATE CORNER STRUCTURE ON METAL INSULATOR METAL - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240379529 titled 'METAL PLATE CORNER STRUCTURE ON METAL INSULATOR METAL
Simplified Explanation: The patent application describes a metal-insulator-metal (MIM) structure and methods for reducing stress accumulation at the corners of conductor layers in semiconductor devices.
Key Features and Innovation:
- Metal-insulator-metal (MIM) structure designed to reduce stress at conductor layer corners.
- Includes a stack of dielectric layers, lower contact, passivation layer, and rounded corners on the third conductor layer.
- First insulator layer between the first and second conductor layers, and second insulator layer between the second and third conductor layers.
Potential Applications: This technology can be applied in the manufacturing of semiconductor devices to improve reliability and performance by reducing stress accumulation at conductor layer corners.
Problems Solved: The technology addresses the issue of stress accumulation at the corners of conductor layers in semiconductor devices, which can lead to reliability issues and performance degradation.
Benefits:
- Improved reliability and performance of semiconductor devices.
- Enhanced durability and longevity of the devices.
- Reduction in stress-related failures.
Commercial Applications: Potential commercial applications include the production of high-performance electronic devices, integrated circuits, and other semiconductor products where reliability and longevity are crucial.
Prior Art: Readers can explore prior research on stress reduction techniques in semiconductor devices, metal-insulator-metal structures, and methods for improving device reliability.
Frequently Updated Research: Researchers are continually exploring new materials and designs to further enhance stress reduction techniques in semiconductor devices and improve overall device performance.
Questions about Metal-Insulator-Metal (MIM) Structure: 1. How does the MIM structure contribute to reducing stress accumulation in semiconductor devices? 2. What are the specific benefits of rounded corners on the third conductor layer in the MIM structure?
Original Abstract Submitted
a metal-insulator-metal (mim) structure and methods of forming the same for reducing the accumulation of external stress at the corners of the conductor layers are disclosed herein. an exemplary device includes a substrate that includes an active semiconductor device. a stack of dielectric layers is disposed over the substrate. a lower contact is disposed over the stack of dielectric layers. a passivation layer is disposed over the lower contact. a mim structure is disposed over the passivation layer, the mim structure including a first conductor layer, a second conductor layer disposed over the first conductor layer, and a third conductor layer disposed over the second conductor layer. a first insulator layer is disposed between the first conductor layer and the second conductor layer. a second insulator layer is disposed between the second conductor layer and the third conductor layer. one or more corners of the third conductor layer are rounded.
