Taiwan semiconductor manufacturing company, ltd. (20240379528). METAL-INSULATOR-METAL DEVICE WITH IMPROVED PERFORMANCE simplified abstract
Contents
METAL-INSULATOR-METAL DEVICE WITH IMPROVED PERFORMANCE
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Min-Feng Kao of Chiayi City (TW)
Dun-Nian Yaung of Taipei City (TW)
Jen-Cheng Liu of Hsin-Chu City (TW)
Hsing-Chih Lin of Tainan City (TW)
Kuan-Hua Lin of New Taipei City (TW)
METAL-INSULATOR-METAL DEVICE WITH IMPROVED PERFORMANCE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240379528 titled 'METAL-INSULATOR-METAL DEVICE WITH IMPROVED PERFORMANCE
- Simplified Explanation:**
The patent application is for a metal-insulator-metal (MIM) device that includes multiple conductive layers and capacitor dielectrics. A conductive structure extends through the layers and dielectrics, providing a unique design for the device.
- Key Features and Innovation:**
- Metal-insulator-metal (MIM) device design - Multiple conductive layers and capacitor dielectrics - Conductive structure extending through layers and dielectrics
- Potential Applications:**
- Electronics industry for advanced circuitry - Communication technology for signal processing - Semiconductor manufacturing for integrated circuits
- Problems Solved:**
- Enhances performance of electronic devices - Improves signal transmission efficiency - Enables miniaturization of circuits
- Benefits:**
- Increased device efficiency - Enhanced signal processing capabilities - Compact design for space-saving applications
- Commercial Applications:**
Potential commercial applications include: - High-speed data processing systems - Telecommunication equipment - Consumer electronics devices
- Prior Art:**
Readers can explore prior art related to MIM devices, conductive structures, and capacitor dielectrics in the field of semiconductor technology.
- Frequently Updated Research:**
Stay updated on the latest advancements in MIM device technology, conductive materials, and capacitor dielectric innovations.
- Questions about Metal-Insulator-Metal (MIM) Devices:**
1. What are the primary advantages of using a metal-insulator-metal (MIM) device in electronic circuits? 2. How does the design of a MIM device contribute to improved signal processing capabilities?
Original Abstract Submitted
various embodiments of the present disclosure are directed towards a metal-insulator-metal (mim) device. the mim device includes a first conductive layer disposed over a substrate, a first capacitor dielectric disposed over the first conductive layer, and a second conductive layer disposed over the first capacitor dielectric. the first conductive layer and the first capacitor dielectric laterally extend past an outermost sidewall of the second conductive layer. a second capacitor dielectric is disposed over the second conductive layer and the first capacitor dielectric, and a third conductive layer is disposed over the second capacitor dielectric. the third conductive layer laterally extends past the outermost sidewall of the second conductive layer. a conductive structure is coupled to both the first conductive layer and the third conductive layer. the conductive structure extends through the first capacitor dielectric and the second capacitor dielectric laterally outside of the second conductive layer.
