Taiwan semiconductor manufacturing company, ltd. (20240379462). HYBRID INTEGRATED CIRCUIT DIES simplified abstract
Contents
HYBRID INTEGRATED CIRCUIT DIES
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Hong-Shyang Wu of Taipei City (TW)
HYBRID INTEGRATED CIRCUIT DIES - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240379462 titled 'HYBRID INTEGRATED CIRCUIT DIES
The abstract describes a device that includes a gallium nitride device on a substrate, with various layers and components for improved functionality.
- Gallium nitride device on a substrate with an electrode
- Dielectric layer surrounding the gallium nitride device
- Isolation layer on top of the dielectric layer
- Semiconductor layer with a silicon device on the isolation layer
- Through via connecting the electrode of the gallium nitride device
- Interconnect structure with metallization patterns on the semiconductor layer
Potential Applications: - Power electronics - RF amplifiers - LED lighting - Solar inverters
Problems Solved: - Improved performance and efficiency of electronic devices - Enhanced integration of different semiconductor materials
Benefits: - Higher power handling capabilities - Better thermal management - Increased reliability and longevity of devices
Commercial Applications: Title: Advanced Power Electronics Devices for Various Industries Description: This technology can be used in a wide range of industries such as telecommunications, automotive, aerospace, and renewable energy for more efficient and reliable electronic systems.
Questions about the technology: 1. How does the integration of gallium nitride and silicon devices improve overall device performance? - The integration allows for better power handling capabilities and improved efficiency. 2. What are the potential challenges in manufacturing devices with such complex layer structures? - Challenges may include precise alignment of layers and controlling material properties during fabrication.
Original Abstract Submitted
in an embodiment, a device includes: a gallium nitride device on a substrate, the gallium nitride device including an electrode; a dielectric layer on and around the gallium nitride device; an isolation layer on the dielectric layer; a semiconductor layer on the isolation layer, the semiconductor layer including a silicon device; a through via extending through the semiconductor layer, the isolation layer, and the dielectric layer, the through via electrically and physically coupled to the electrode of the gallium nitride device; and an interconnect structure on the semiconductor layer, the interconnect structure including metallization patterns electrically coupled to the through via and the silicon device.
