Taiwan semiconductor manufacturing company, ltd. (20240379461). TRANSISTOR ISOLATION REGIONS simplified abstract
Contents
TRANSISTOR ISOLATION REGIONS
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Sen-Hong Syue of Zhubei City (TW)
Huicheng Chang of Tainan City (TW)
TRANSISTOR ISOLATION REGIONS - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240379461 titled 'TRANSISTOR ISOLATION REGIONS
The abstract describes a method for creating a hybrid fin structure in a semiconductor device by etching a trench in a substrate, depositing a liner material, depositing a flowable material, converting them to solid insulation, and forming a hybrid fin in the remaining portion of the trench.
- Etching a trench in a substrate
- Depositing a liner material using atomic layer deposition
- Depositing a flowable material using contouring flowable chemical vapor deposition
- Converting the liner and flowable materials to solid insulation
- Forming a hybrid fin in the unfilled portion of the trench
Potential Applications: - Semiconductor manufacturing - Integrated circuit design - Electronics industry
Problems Solved: - Improving insulation in semiconductor devices - Enhancing performance and efficiency of integrated circuits
Benefits: - Increased insulation capabilities - Better performance of semiconductor devices - Enhanced efficiency of integrated circuits
Commercial Applications: Title: "Advanced Semiconductor Manufacturing for Enhanced Performance" This technology can be used in the production of high-performance electronic devices, leading to improved functionality and efficiency in various industries such as telecommunications, computing, and consumer electronics.
Questions about the technology: 1. How does the method of converting liner and flowable materials to solid insulation improve the performance of semiconductor devices? 2. What are the potential challenges in implementing this hybrid fin structure in semiconductor manufacturing processes?
Original Abstract Submitted
in an embodiment, a method includes: etching a trench in a substrate; depositing a liner material in the trench with an atomic layer deposition process; depositing a flowable material on the liner material and in the trench with a contouring flowable chemical vapor deposition process; converting the liner material and the flowable material to a solid insulation material, a portion of the trench remaining unfilled by the solid insulation material; and forming a hybrid fin in the portion of the trench unfilled by the solid insulation material.
