Taiwan semiconductor manufacturing company, ltd. (20240379459). SEMICONDUCTOR DEVICES simplified abstract

SEMICONDUCTOR DEVICES

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Chun-Han Chen of Changhua City (TW)

Chen-Ming Lee of Yangmei City (TW)

Fu-Kai Yang of Hsinchu (TW)

Mei-Yun Wang of Chu-Pei City (TW)

SEMICONDUCTOR DEVICES - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240379459 titled 'SEMICONDUCTOR DEVICES

The patent application describes a device with a semiconductor substrate, two fins extending from the substrate, and an epitaxial source/drain region with a main layer containing a first semiconductor material.

• The main layer has an upper faceted surface and a lower faceted surface raised from the fins.
• A semiconductor contact etch stop layer (CESL) made of a second semiconductor material contacts the faceted surfaces.
• The second semiconductor material is different from the first semiconductor material.

Potential Applications: - Advanced semiconductor devices - High-performance electronics - Nanotechnology research

Problems Solved: - Enhancing semiconductor device performance - Improving efficiency in electronic components

Benefits: - Increased speed and efficiency in electronic devices - Enhanced reliability and durability of semiconductor components

Commercial Applications: Title: "Next-Generation Semiconductor Devices for High-Performance Electronics" This technology could revolutionize the semiconductor industry by enabling faster and more efficient electronic devices, leading to advancements in various fields such as telecommunications, computing, and consumer electronics.

Questions about the technology: 1. How does the use of different semiconductor materials in the CESL layer improve device performance?

  - The use of different semiconductor materials in the CESL layer helps optimize the contact between the main layer and the fins, enhancing device efficiency and reliability.

2. What are the potential challenges in scaling up this technology for mass production?

  - Scaling up this technology for mass production may involve challenges related to manufacturing processes, material costs, and integration with existing semiconductor technologies.

Original Abstract Submitted

in an embodiment, a device includes: a semiconductor substrate; a first fin extending from the semiconductor substrate; a second fin extending from the semiconductor substrate; an epitaxial source/drain region including: a main layer in the first fin and the second fin, the main layer including a first semiconductor material, the main layer having an upper faceted surface and a lower faceted surface, the upper faceted surface and the lower faceted surface each being raised from respective surfaces of the first fin and the second fin; and a semiconductor contact etch stop layer (cesl) contacting the upper faceted surface and the lower faceted surface of the main layer, the semiconductor cesl including a second semiconductor material, the second semiconductor material being different from the first semiconductor material.