Taiwan semiconductor manufacturing company, ltd. (20240379458). SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Jhon-Jhy Liaw of Hsinchu County (TW)

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240379458 titled 'SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

The method for manufacturing a semiconductor device involves creating semiconductor fins on a substrate, forming a dielectric fin between the semiconductor fins, and surrounding them with a shallow trench isolation (STI) structure. A gate strip is then formed across the semiconductor fins, with the gate strip being patterned to create individual gate structures for each fin. After patterning the gate strip, a high-k dielectric material is deposited over the dielectric fin and in contact with the gate structures. Key Features and Innovation: - Formation of semiconductor fins and a dielectric fin for improved device performance. - Use of a gate strip and patterning to create individual gate structures for each semiconductor fin. - Deposition of a high-k dielectric material for enhanced device functionality. Potential Applications: - This technology can be applied in the manufacturing of advanced semiconductor devices for various electronic applications. - It can be used in the production of high-performance integrated circuits and microprocessors. Problems Solved: - Provides a method for enhancing the performance and functionality of semiconductor devices. - Offers a solution for improving the efficiency and reliability of electronic components. Benefits: - Improved device performance and functionality. - Enhanced efficiency and reliability of semiconductor devices. Commercial Applications: - This technology has potential commercial applications in the semiconductor industry for the production of advanced electronic devices. - It can be utilized by semiconductor manufacturers to develop cutting-edge products for various markets. Prior Art: - Researchers and engineers can explore prior art related to semiconductor device manufacturing processes, gate structure formation, and dielectric material deposition. Frequently Updated Research: - Stay updated on the latest advancements in semiconductor device manufacturing, gate structure design, and dielectric material technologies. Questions about Semiconductor Device Manufacturing: 1. What are the key steps involved in manufacturing a semiconductor device using this method? 2. How does the deposition of a high-k dielectric material impact the performance of the semiconductor device?

Original Abstract Submitted

a method for manufacturing a semiconductor device includes forming first and second semiconductor fins extending upwardly from a substrate; forming a dielectric fin between the first and second semiconductor fins; forming a shallow trench isolation (sti) structure laterally surrounding lower portions of the first and second semiconductor fins and the dielectric fin; forming a gate strip extending across upper portions of the first semiconductor fin, the dielectric fin, and the second semiconductor fin; patterning the gate strip to form a first gate structure extending across the first semiconductor fin and a second gate structure extending across the second semiconductor fin while leaving the dielectric fin uncovered; and after patterning the gate strip, depositing a high-k dielectric material over the dielectric fin and in contact with a longitudinal end of the first gate structure and a longitudinal end of the second gate structure.