Taiwan semiconductor manufacturing company, ltd. (20240379455). Methods For Forming Source/Drain Features simplified abstract
Contents
Methods For Forming Source/Drain Features
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Wei-Yang Lee of Taipei City (TW)
Chia-Pin Lin of Hsinchu County (TW)
Yuan-Ching Peng of Hsinchu (TW)
Methods For Forming Source/Drain Features - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240379455 titled 'Methods For Forming Source/Drain Features
Simplified Explanation: The patent application describes a method for forming a semiconductor structure, involving processes such as trench formation, sacrificial structure deposition, dielectric film etching, epitaxial source/drain feature formation, and gate stack replacement.
Key Features and Innovation:
- Formation of fin sidewall spacers (FSW) along the sacrificial structure sidewalls.
- Epitaxial source/drain feature sandwiched by FSW spacers.
- Replacement of dummy gate structure with a gate stack.
Potential Applications: The technology can be applied in the semiconductor industry for the production of advanced semiconductor devices with improved performance and efficiency.
Problems Solved: The technology addresses the need for more precise and controlled formation of semiconductor structures, enhancing the overall functionality of the devices.
Benefits:
- Enhanced performance and efficiency of semiconductor devices.
- Improved control over the formation of semiconductor structures.
- Potential for the development of more advanced and reliable electronic devices.
Commercial Applications: The technology can be utilized in the production of high-performance electronic devices such as smartphones, tablets, computers, and other consumer electronics, as well as in industrial applications like automotive electronics and IoT devices.
Prior Art: Readers can explore prior art related to semiconductor structure formation, epitaxial growth, and gate stack replacement in the semiconductor industry.
Frequently Updated Research: Stay updated on the latest advancements in semiconductor manufacturing techniques, epitaxial growth processes, and gate stack technologies to further enhance the efficiency and performance of semiconductor devices.
Questions about Semiconductor Structure Formation: 1. What are the key steps involved in forming a semiconductor structure using the described method? 2. How does the technology improve the performance and efficiency of semiconductor devices?
Original Abstract Submitted
a semiconductor structure and a method of forming the same are provided. in an embodiment, a method includes receiving a workpiece comprising a substrate, an active region protruding from the substrate, and a dummy gate structure disposed over a channel region of the active region. the method also includes forming a trench in a source/drain region of the active region, forming a sacrificial structure in the trench, conformally depositing a dielectric film over the workpiece, performing a first etching process to etch back the dielectric film to form fin sidewall (fsw) spacers extending along sidewalls of the sacrificial structure, performing a second etching process to remove the sacrificial structure to expose the trench, forming an epitaxial source/drain feature in the trench such that a portion of the epitaxial source/drain feature being sandwiched by the fsw spacers, and replacing the dummy gate structure with a gate stack.
