Taiwan semiconductor manufacturing company, ltd. (20240379452). Dielectric Fins With Different Dielectric Constants and Sizes in Different Regions of a Semiconductor Device simplified abstract

Dielectric Fins With Different Dielectric Constants and Sizes in Different Regions of a Semiconductor Device

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Min-Yann Hsieh of Kaohsiung City (TW)

Hua Feng Chen of Hsinchu City (TW)

Jhon Jhy Liaw of Zhudong Township (TW)

Dielectric Fins With Different Dielectric Constants and Sizes in Different Regions of a Semiconductor Device - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240379452 titled 'Dielectric Fins With Different Dielectric Constants and Sizes in Different Regions of a Semiconductor Device

The semiconductor device described in the patent application consists of multiple epi-layers and dielectric fins in different regions of the device. The dielectric fins have varying dielectric constants, with the second dielectric fin having a lower dielectric constant than the first dielectric fin.

• The semiconductor device includes first and second epi-layers in one region, separated by a dielectric fin with a high dielectric constant.
• In another region of the device, there are third and fourth epi-layers separated by a dielectric fin with a lower dielectric constant.
• The use of dielectric fins with different dielectric constants helps in controlling the electrical properties of the semiconductor device.

Potential Applications: - This technology can be applied in the manufacturing of advanced semiconductor devices for various electronic applications. - It can be used in the development of high-performance integrated circuits and microprocessors.

Problems Solved: - Provides improved control over the electrical characteristics of semiconductor devices. - Enhances the performance and efficiency of electronic components.

Benefits: - Increased functionality and performance of semiconductor devices. - Better integration of multiple epi-layers in a semiconductor device. - Enhanced reliability and stability of electronic components.

Commercial Applications: Title: Advanced Semiconductor Devices for High-Performance Electronics This technology can be utilized in the production of cutting-edge electronic devices, such as smartphones, computers, and other consumer electronics. It can also find applications in the automotive industry for advanced driver assistance systems and in the aerospace sector for avionics.

Questions about the technology: 1. How does the use of dielectric fins with different dielectric constants impact the overall performance of the semiconductor device? 2. What are the potential challenges in implementing this technology in mass production of electronic components?

Frequently Updated Research: Researchers are continually exploring new materials and structures to further enhance the performance and efficiency of semiconductor devices. Stay updated on the latest advancements in the field to leverage the full potential of this technology.

Original Abstract Submitted

a semiconductor device includes. a first epi-layer and a second epi-layer are each located in a first region of the semiconductor device. a first dielectric fin is located between the first epi-layer and the second epi-layer. the first dielectric fin has a first dielectric constant. a third epi-layer and a fourth epi-layer are each located in a second region of the semiconductor device. a second dielectric fin is located between the third epi-layer and the fourth epi-layer. the second dielectric fin has a second dielectric constant that is less than the first dielectric constant.