Taiwan semiconductor manufacturing company, ltd. (20240379449). SEMICONDUCTOR STRUCTURE simplified abstract
Contents
SEMICONDUCTOR STRUCTURE
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Chia-Wei Hsu of Taipei City (TW)
Tsung-Da Lin of Pingtung County (TW)
Chi On Chui of Hsinchu City (TW)
SEMICONDUCTOR STRUCTURE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240379449 titled 'SEMICONDUCTOR STRUCTURE
The abstract of the patent application describes a semiconductor structure with two n-type transistors, each with a different threshold voltage and gate dielectric layer composition.
- The first n-type transistor has a lower threshold voltage than the second n-type transistor.
- Both gate dielectric layers in the transistors contain fluorine and hafnium.
- The first gate dielectric layer has a higher average fluorine concentration compared to hafnium, while the second gate dielectric layer has a higher average hafnium concentration.
- This difference in composition results in different threshold voltages for the two transistors.
Potential Applications: - This semiconductor structure could be used in various electronic devices requiring efficient and reliable transistors. - It may find applications in the semiconductor industry for improving the performance of integrated circuits.
Problems Solved: - The technology addresses the need for transistors with different threshold voltages in a single semiconductor structure. - It offers a solution for optimizing the composition of gate dielectric layers to achieve desired transistor characteristics.
Benefits: - Enhanced performance and efficiency in electronic devices. - Improved control over threshold voltages in semiconductor structures.
Commercial Applications: Title: Advanced Semiconductor Structure for Enhanced Transistor Performance This technology could be commercially used in the production of high-performance electronic devices, leading to improved market competitiveness and consumer satisfaction.
Questions about the technology: 1. How does the composition of gate dielectric layers impact the threshold voltages of transistors in the semiconductor structure? 2. What are the potential advantages of having transistors with different threshold voltages in a single semiconductor device?
Original Abstract Submitted
a semiconductor structure is provided. the semiconductor structure includes a first n-type transistor having a first threshold voltage and including a first gate dielectric layer, and a second n-type transistor having a second threshold voltage and including a second gate dielectric layer. the first threshold voltage is lower than the second threshold. each of the first gate dielectric layer and the second gate dielectric layer contains fluorine and hafnium. the first gate dielectric layer has a first average fluorine concentration and a first average hafnium concentration. the second gate dielectric layer has a second average fluorine concentration and a second average hafnium concentration. a first ratio of the first average fluorine concentration to the first average hafnium concentration is greater than and a second ratio of the second average fluorine concentration to the second average hafnium concentration.
