Taiwan semiconductor manufacturing company, ltd. (20240379444). GATE-ALL-AROUND SEMICONDUCTOR DEVICE AND METHOD simplified abstract

GATE-ALL-AROUND SEMICONDUCTOR DEVICE AND METHOD

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Chia-Hao Pao of Hsinchu (TW)

Chih-Chuan Yang of Tainan City (TW)

Shih-Hao Lin of Hsinchu City (TW)

Kian-Long Lim of Hsinchu City (TW)

Chih-Wei Lee of Hsinchu (TW)

Chien-Yuan Chen of Hsinchu (TW)

Jo-Chun Hung of Hsinchu (TW)

Yung-Hsiang Chan of Hsinchu (TW)

Yu-Kuan Lin of Taipei City (TW)

Lien-Jung Hung of Taipei (TW)

GATE-ALL-AROUND SEMICONDUCTOR DEVICE AND METHOD - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240379444 titled 'GATE-ALL-AROUND SEMICONDUCTOR DEVICE AND METHOD

The method described in the abstract involves creating air gaps between layers of semiconductor channel layers by depositing a high-k dielectric layer and a first dielectric layer in specific configurations.

• The method includes providing a substrate, a dummy fin, and a stack of semiconductor channel layers.
• An interfacial layer is formed around each semiconductor channel layer.
• A high-k dielectric layer is deposited, with a portion over the interfacial layer spaced away from a portion on the sidewalls of the dummy fin.
• A first dielectric layer is deposited over the dummy fin and semiconductor channel layers, causing air gaps to form between layers.

Potential Applications: - This technology can be applied in the manufacturing of advanced semiconductor devices. - It can improve the performance and efficiency of integrated circuits.

Problems Solved: - The method addresses the challenge of reducing parasitic capacitance in semiconductor devices. - It helps in enhancing the overall performance of electronic devices.

Benefits: - Improved insulation between semiconductor layers. - Enhanced electrical properties of the device. - Increased efficiency and reliability of integrated circuits.

Commercial Applications: Title: Advanced Semiconductor Device Manufacturing This technology can be utilized in the production of high-performance electronic devices, leading to advancements in various industries such as telecommunications, computing, and consumer electronics.

Questions about the technology: 1. How does the method of creating air gaps between semiconductor layers improve device performance?

  - The air gaps reduce parasitic capacitance, enhancing the electrical properties of the device.

2. What are the potential challenges in implementing this technology on a large scale?

  - Large-scale implementation may require optimization of deposition processes and material compatibility.

Original Abstract Submitted

a method includes providing a substrate, a dummy fin, and a stack of semiconductor channel layers; forming an interfacial layer wrapping around each of the semiconductor channel layers; depositing a high-k dielectric layer, wherein a first portion of the high-k dielectric layer over the interfacial layer is spaced away from a second portion of the high-k dielectric layer on sidewalls of the dummy fin by a first distance; depositing a first dielectric layer over the dummy fin and over the semiconductor channel layers, wherein a merge-critical-dimension of the first dielectric layer is greater than the first distance thereby causing the first dielectric layer to be deposited in a space between the dummy fin and a topmost layer of the stack of semiconductor channel layers, thereby providing air gaps between adjacent layers of the stack of semiconductor channel layers and between the dummy fin and the stack of semiconductor channel layers.