Taiwan semiconductor manufacturing company, ltd. (20240379443). METHOD FOR FORMING SEMICONDUCTOR DEVICE STRUCTURE simplified abstract
Contents
METHOD FOR FORMING SEMICONDUCTOR DEVICE STRUCTURE
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Chia-Yun Cheng of Hsinchu City (TW)
METHOD FOR FORMING SEMICONDUCTOR DEVICE STRUCTURE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240379443 titled 'METHOD FOR FORMING SEMICONDUCTOR DEVICE STRUCTURE
The abstract of the patent application describes a method for forming a semiconductor device structure involving the creation of a fin structure, a dummy gate structure, a spacer layer, and implanting dopants to form doped regions.
- Formation of a fin structure over a substrate
- Creation of a dummy gate structure across the fin structure
- Deposition of a spacer layer over the fin structure and dummy gate structure
- Implantation of dopants into the spacer layer to form doped regions
- Removal of the doped regions of the spacer layer
- Formation of a source/drain structure attached to the fin structure
Potential Applications: - Semiconductor manufacturing - Integrated circuit fabrication - Advanced electronic devices
Problems Solved: - Enhancing semiconductor device performance - Improving transistor functionality - Increasing device density on a chip
Benefits: - Enhanced device performance - Increased transistor efficiency - Higher chip integration capabilities
Commercial Applications: Title: Advanced Semiconductor Device Manufacturing Method This technology can be utilized in the production of high-performance electronic devices, leading to improved efficiency and functionality in various industries such as telecommunications, computing, and consumer electronics.
Questions about the technology: 1. How does this method improve the performance of semiconductor devices? 2. What are the key advantages of forming doped regions using the described process?
Frequently Updated Research: Researchers are constantly exploring new materials and techniques to further enhance the performance and efficiency of semiconductor devices. Stay updated on the latest advancements in semiconductor manufacturing to leverage cutting-edge technologies for future applications.
Original Abstract Submitted
a method for forming a semiconductor device structure includes forming a fin structure over a substrate. the method also includes forming a dummy gate structure across the fin structure. the method also includes depositing a spacer layer over the fin structure and the dummy gate structure. the method also includes implanting dopants into the spacer layer to form a first doped region vertically overlapping the dummy gate structure and a second doped region over the fin structure without vertically overlapping the dummy gate structure. a middle region of the spacer layer connects the first doped region and the second doped region. the method also includes removing the first doped region and the second doped region of the spacer layer. the method also includes forming a source/drain structure attached to the fin structure after removing the first doped region and the second doped region of the spacer layer.
