Taiwan semiconductor manufacturing company, ltd. (20240379442). SEMICONDUCTOR DEVICE WITH S/D BOTTOM ISOLATION AND METHODS OF FORMING THE SAME simplified abstract

SEMICONDUCTOR DEVICE WITH S/D BOTTOM ISOLATION AND METHODS OF FORMING THE SAME

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Xusheng Wu of Hsinchu County (TW)

Ying-Keung Leung of Hsinchu City (TW)

Huiling Shang of Hsinchu County (TW)

SEMICONDUCTOR DEVICE WITH S/D BOTTOM ISOLATION AND METHODS OF FORMING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240379442 titled 'SEMICONDUCTOR DEVICE WITH S/D BOTTOM ISOLATION AND METHODS OF FORMING THE SAME

The abstract of the patent application describes a semiconductor device and its manufacturing method. The device includes multiple semiconductor stacks, inner spacers, and a bulk source/drain feature separated by air gaps.

• First semiconductor stack with layers stacked perpendicular to the substrate
• Second semiconductor stack with layers also stacked perpendicular to the substrate
• Inner spacers between the edge portions of the semiconductor layers
• Bulk source/drain feature separated from the substrate by air gaps
• Bulk source/drain feature separated from inner spacers by air gaps

Potential Applications: - Advanced semiconductor technology - High-performance electronic devices - Integrated circuits

Problems Solved: - Improved performance and efficiency of semiconductor devices - Enhanced functionality of electronic components - Reduction of interference and crosstalk in circuits

Benefits: - Increased speed and reliability of electronic devices - Higher integration density on chips - Enhanced overall performance of semiconductor technology

Commercial Applications: Title: Advanced Semiconductor Devices for High-Performance Electronics This technology can be utilized in the development of cutting-edge electronic devices such as smartphones, computers, and other consumer electronics. It can also be applied in the automotive industry for advanced driver assistance systems and in the healthcare sector for medical imaging equipment.

Prior Art: Prior research in the field of semiconductor devices and manufacturing methods can be found in academic journals, patent databases, and industry publications. Researchers may explore prior patents related to semiconductor stacking techniques, air gap integration, and source/drain features in semiconductor devices.

Frequently Updated Research: Researchers in the semiconductor industry are constantly exploring new materials, processes, and designs to enhance the performance and efficiency of electronic devices. Stay updated on the latest advancements in semiconductor technology through industry conferences, research papers, and collaboration with experts in the field.

Questions about Semiconductor Devices with Air Gaps: 1. How do air gaps in semiconductor devices contribute to their performance and efficiency? Air gaps in semiconductor devices help reduce interference and crosstalk between components, leading to improved signal integrity and overall device performance.

2. What are the challenges associated with integrating air gaps in semiconductor devices? Integrating air gaps in semiconductor devices requires precise manufacturing processes to ensure proper alignment and spacing between components. Additionally, maintaining the structural integrity of the device while incorporating air gaps can be a technical challenge for designers and engineers.

Original Abstract Submitted

semiconductor device and the manufacturing method thereof are disclosed. an exemplary semiconductor device comprises first semiconductor stack over a substrate, wherein the first semiconductor stack includes first semiconductor layers separated from each other and stacked up along a direction substantially perpendicular to a top surface of the substrate; second semiconductor stack over the substrate, wherein the second semiconductor stack includes second semiconductor layers separated from each other and stacked up along the direction substantially perpendicular to the top surface of the substrate; inner spacers between edge portions of the first semiconductor layers and between edge portions of the second semiconductor layers; and a bulk source/drain (s/d) feature between the first semiconductor stack and the second semiconductor stack, wherein the bulk s/d feature is separated from the substrate by a first air gap, and the bulk s/d feature is separated from the inner spacers by second air gaps.