Taiwan semiconductor manufacturing company, ltd. (20240379441). METHODS FOR IMPROVEMENT OF PHOTORESIST PATTERNING PROFILE simplified abstract
Contents
METHODS FOR IMPROVEMENT OF PHOTORESIST PATTERNING PROFILE
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Ting-Jung Chang of Hsinchu (TW)
Hsin-Chen Cheng of Hsinchu (TW)
Chih-Tsang Tseng of Hsinchu (TW)
METHODS FOR IMPROVEMENT OF PHOTORESIST PATTERNING PROFILE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240379441 titled 'METHODS FOR IMPROVEMENT OF PHOTORESIST PATTERNING PROFILE
The method described in the patent application involves forming a semiconductor structure by applying a cleaning solution to an epitaxial layer, forming a patterned photoresist layer, and creating contact regions with different conductivity types.
- Formation of gate structure over active region of substrate
- Formation of epitaxial layer with first dopants of first conductivity type
- Application of cleaning solution with ozone and deionized water to form oxide layer
- Formation of patterned photoresist layer to expose portion of oxide layer
- Creation of contact region with second dopants of second conductivity type
- Formation of contact over contact region
Potential Applications: - Semiconductor manufacturing - Integrated circuit fabrication - Electronics industry
Problems Solved: - Improving semiconductor structure formation process - Enhancing conductivity control in semiconductor devices
Benefits: - Increased efficiency in semiconductor manufacturing - Improved performance of integrated circuits - Enhanced reliability of electronic devices
Commercial Applications: Title: Advanced Semiconductor Structure Formation Method This technology could be utilized in the production of various electronic devices, such as smartphones, computers, and automotive electronics. The market implications include faster and more reliable semiconductor manufacturing processes, leading to higher quality electronic products.
Prior Art: Readers can explore prior art related to semiconductor structure formation methods in semiconductor manufacturing journals, patent databases, and industry publications.
Frequently Updated Research: Researchers are constantly exploring new materials and techniques for semiconductor structure formation to improve device performance and efficiency.
Questions about Semiconductor Structure Formation: 1. How does the cleaning solution with ozone and deionized water contribute to the formation of the oxide layer? The cleaning solution helps remove impurities and contaminants from the epitaxial layer, allowing for the formation of a clean and uniform oxide layer.
2. What are the key differences between the first and second dopants used in the contact regions? The first dopants are of a first conductivity type, while the second dopants are of a second conductivity type, allowing for the creation of regions with different electrical properties in the semiconductor structure.
Original Abstract Submitted
a method of forming a semiconductor structure is provided. the method includes forming a gate structure over an active region of a substrate, forming an epitaxial layer comprising first dopants of a first conductivity type over portions of the active region on opposite sides of the gate structure, the epitaxial layer, applying a cleaning solution comprising ozone and deionized water to the epitaxial layer, thereby forming an oxide layer on the epitaxial layer, forming a patterned photoresist layer over the oxide layer and the gate structure to expose a portion of the oxide layer, forming a contact region second dopants of a second conductivity type opposite the first conductivity type in the portion of the epitaxial layer not covered by the patterned photoresist layer, and forming a contact overlying the contact region.
