Taiwan semiconductor manufacturing company, ltd. (20240379440). TRANSISTORS WITH CHANNELS FORMED OF LOW-DIMENSIONAL MATERIALS AND METHOD FORMING SAME simplified abstract

TRANSISTORS WITH CHANNELS FORMED OF LOW-DIMENSIONAL MATERIALS AND METHOD FORMING SAME

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Chao-Ching Cheng of Hsinchu (TW)

Tzu-Ang Chao of Hsinchu (TW)

Chun-Chieh Lu of Taipei City (TW)

Hung-Li Chiang of Taipei City (TW)

Tzu-Chiang Chen of Hsinchu (TW)

Lain-Jong Li of Hsinchu (TW)

TRANSISTORS WITH CHANNELS FORMED OF LOW-DIMENSIONAL MATERIALS AND METHOD FORMING SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240379440 titled 'TRANSISTORS WITH CHANNELS FORMED OF LOW-DIMENSIONAL MATERIALS AND METHOD FORMING SAME

The method described in the abstract involves the formation of a protruding fin by layering low-dimensional layers and insulators, then patterning them accordingly to create a transistor.

• Formation of a first low-dimensional layer over an isolation layer
• Formation of a first insulator over the first low-dimensional layer
• Formation of a second low-dimensional layer over the first insulator
• Formation of a second insulator over the second low-dimensional layer
• Patterning of the layers and insulators into a protruding fin
• Remaining portions form low-dimensional and insulator strips
• Transistor formation based on the protruding fin

Potential Applications: - Semiconductor manufacturing - Integrated circuit design - Transistor technology

Problems Solved: - Enhancing transistor performance - Improving semiconductor fabrication processes

Benefits: - Increased efficiency in transistor design - Enhanced functionality of integrated circuits

Commercial Applications: Title: "Advanced Transistor Technology for Semiconductor Industry" This technology can be utilized in the production of high-performance electronic devices, leading to advancements in computing, telecommunications, and consumer electronics markets.

Questions about the technology: 1. How does this method improve transistor performance compared to traditional techniques? 2. What are the key advantages of using low-dimensional layers in semiconductor manufacturing processes?

Original Abstract Submitted

a method includes forming a first low-dimensional layer over an isolation layer, forming a first insulator over the first low-dimensional layer, forming a second low-dimensional layer over the first insulator, forming a second insulator over the second low-dimensional layer, and patterning the first low-dimensional layer, the first insulator, the second low-dimensional layer, and the second insulator into a protruding fin. remaining portions of the first low-dimensional layer, the first insulator, the second low-dimensional layer, and the second insulator form a first low-dimensional strip, a first insulator strip, a second low-dimensional strip, and a second insulator strip, respectively. a transistor is then formed based on the protruding fin.