Taiwan semiconductor manufacturing company, ltd. (20240379435). SEMICONDUCTOR STRUCTURE HAVING SELF-ALIGNED CONDUCTIVE STRUCTURE AND METHOD FOR FORMING THE SEMICONDUCTOR STRUCTURE simplified abstract

SEMICONDUCTOR STRUCTURE HAVING SELF-ALIGNED CONDUCTIVE STRUCTURE AND METHOD FOR FORMING THE SEMICONDUCTOR STRUCTURE

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Shao-Kuan Lee of Hsinchu (TW)

Cheng-Chin Lee of Hsinchu (TW)

Cherng-Shiaw Tsai of Hsinchu (TW)

Ting-Ya Lo of Hsinchu (TW)

Chi-Lin Teng of Hsinchu (TW)

Hsin-Yen Huang of Hsinchu (TW)

Hsiao-Kang Chang of Hsinchu (TW)

Shau-Lin Shue of Hsinchu (TW)

SEMICONDUCTOR STRUCTURE HAVING SELF-ALIGNED CONDUCTIVE STRUCTURE AND METHOD FOR FORMING THE SEMICONDUCTOR STRUCTURE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240379435 titled 'SEMICONDUCTOR STRUCTURE HAVING SELF-ALIGNED CONDUCTIVE STRUCTURE AND METHOD FOR FORMING THE SEMICONDUCTOR STRUCTURE

The method described in the patent application involves creating a semiconductor structure by forming various layers and features in a precise manner.

• Forming a conductive layer
• Applying a patterned mask layer on the conductive layer
• Patterning the conductive layer to create a recess and a conductive feature
• Adding a first dielectric layer over the mask layer and filling the recess with it
• Creating an opening in the first dielectric layer
• Introducing a blocking layer in the opening
• Adding an etch stop layer to cover the first dielectric layer
• Depositing a second dielectric layer on the etch stop layer
• Patterning the second dielectric layer to form a through hole
• Filling the through hole with an electrically conductive material to create an interconnect connected to the conductive feature

Potential Applications: - Semiconductor manufacturing - Electronics industry - Integrated circuit production

Problems Solved: - Efficient creation of semiconductor structures - Precise patterning and layer formation - Enhanced electrical connectivity in devices

Benefits: - Improved performance of electronic devices - Higher reliability in semiconductor structures - Cost-effective manufacturing process

Commercial Applications: Title: Advanced Semiconductor Structure Fabrication for Electronics Industry This technology can be utilized in the production of various electronic devices, such as smartphones, computers, and IoT devices. It can also benefit companies involved in semiconductor manufacturing and integrated circuit production.

Questions about the technology: 1. How does this method improve the efficiency of semiconductor manufacturing processes? 2. What are the potential cost savings associated with implementing this technology in electronic device production?

Frequently Updated Research: Researchers are constantly exploring new materials and techniques to further enhance the performance and efficiency of semiconductor structures. Stay updated on the latest advancements in the field to leverage the full potential of this technology.

Original Abstract Submitted

a method for making a semiconductor structure, including: forming a conductive layer; forming a patterned mask layer on the conductive layer; patterning the conductive layer to form a recess and a conductive feature; forming a first dielectric layer over the patterned mask layer and filling the recess with the first dielectric layer; patterning the first dielectric layer to form an opening; selectively forming a blocking layer in the opening; forming an etch stop layer to cover the first dielectric layer and exposing the blocking layer; forming on the etch stop layer a second dielectric layer; forming a second dielectric layer on the etch stop layer; patterning the second dielectric layer to form a through hole and exposing the conductive feature; and filling the through hole with an electrically conductive material to form an interconnect electrically connected to the conductive feature.