Taiwan semiconductor manufacturing company, ltd. (20240379434). Fully Self-Aligned Interconnect Structure simplified abstract
Contents
Fully Self-Aligned Interconnect Structure
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Hsin-Ping Chen of Hsinchu (TW)
Fully Self-Aligned Interconnect Structure - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240379434 titled 'Fully Self-Aligned Interconnect Structure
The present disclosure describes a method for forming a semiconductor structure by depositing a patterned metal structure on a semiconductor substrate, including a first metal layer and a second metal layer formed in a single deposition step. The method involves etching a portion of the second metal layer to create a metal plug, with the first metal layer containing a metal feature that contacts the metal plug.
- Formation of semiconductor structure with patterned metal layers
- Deposition of first and second metal layers in a single step
- Etching to create a metal plug in the second metal layer
- Contact between metal feature in the first metal layer and the metal plug
- Integration of metal layers on a semiconductor substrate
Potential Applications: - Semiconductor manufacturing - Integrated circuit fabrication - Electronics industry
Problems Solved: - Efficient formation of semiconductor structures - Improved metal layer integration - Enhanced contact between metal layers
Benefits: - Simplified manufacturing process - Enhanced electrical performance - Cost-effective production
Commercial Applications: Title: Semiconductor Structure Formation Method This technology can be utilized in the semiconductor industry for the production of advanced electronic devices, leading to improved performance and cost savings. The method offers a streamlined approach to forming semiconductor structures with patterned metal layers, catering to the growing demand for high-quality integrated circuits.
Prior Art: Readers interested in exploring prior art related to this technology can refer to patents and research papers in the field of semiconductor manufacturing, specifically focusing on methods for forming metal structures on semiconductor substrates.
Frequently Updated Research: Researchers in the semiconductor industry are constantly developing new techniques and materials for enhancing semiconductor structure formation. Stay updated on the latest advancements in metal layer integration and semiconductor manufacturing processes to leverage cutting-edge technologies in your projects.
Questions about Semiconductor Structure Formation Method: 1. How does the method of depositing patterned metal layers contribute to the efficiency of semiconductor structure formation? The deposition of patterned metal layers in a single step streamlines the manufacturing process, reducing production time and costs while ensuring precise integration of metal features.
2. What are the key advantages of etching a portion of the second metal layer to create a metal plug in the semiconductor structure? Etching the second metal layer to form a metal plug enhances the electrical connectivity and contact between different metal layers, improving the overall performance and reliability of the semiconductor structure.
Original Abstract Submitted
the present disclosure provides a method of forming a semiconductor structure. the method includes providing a semiconductor substrate and forming a patterned metal structure on the semiconductor substrate, wherein the patterned metal structure includes a first metal layer and a second metal layer deposited in a single deposition step. the method further includes etching a portion of the second metal layer thereby forming a metal plug in the second metal layer, the first metal layer of the patterned metal structure having a first metal feature underlying and contacting the metal plug.
