Taiwan semiconductor manufacturing company, ltd. (20240379433). CONDUCTIVE FEATURE FORMATION AND STRUCTURE USING BOTTOM-UP FILLING DEPOSITION simplified abstract
Contents
CONDUCTIVE FEATURE FORMATION AND STRUCTURE USING BOTTOM-UP FILLING DEPOSITION
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Chih-Wei Chang of Hsinchu (TW)
Ming-Hsing Tsai of Chu-Pei (TW)
CONDUCTIVE FEATURE FORMATION AND STRUCTURE USING BOTTOM-UP FILLING DEPOSITION - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240379433 titled 'CONDUCTIVE FEATURE FORMATION AND STRUCTURE USING BOTTOM-UP FILLING DEPOSITION
The present disclosure discusses conductive features in electronic devices, such as metal contacts, vias, and lines, and methods for forming them.
- Structure includes a first dielectric layer over a substrate, a first metal contact, a second dielectric layer, and a second metal contact extending into the first metal contact.
- The lower surface of the second metal contact has a tip end extending under the second dielectric layer.
Potential Applications: - Integrated circuits - Semiconductor devices - Electronic components
Problems Solved: - Improved conductivity - Enhanced signal transmission - Reduced resistance
Benefits: - Increased efficiency - Better performance - Enhanced reliability
Commercial Applications: Title: Advanced Conductive Features for Electronic Devices This technology can be used in the semiconductor industry for manufacturing high-performance electronic components, leading to faster and more reliable devices.
Prior Art: Readers can explore prior patents related to metal contacts, vias, and conductive features in electronic devices to understand the evolution of this technology.
Frequently Updated Research: Researchers are constantly studying new materials and techniques to improve the conductivity and performance of electronic devices.
Questions about Advanced Conductive Features: 1. How do advanced conductive features impact the overall performance of electronic devices? 2. What are the potential challenges in implementing advanced conductive features in large-scale production?
Original Abstract Submitted
the present disclosure provides example embodiments relating to conductive features, such as metal contacts, vias, lines, etc., and methods for forming those conductive features. in some embodiments, a structure includes a first dielectric layer over a substrate, a first conductive feature through the first dielectric layer, the first conductive feature comprising a first metal, a second dielectric layer over the first dielectric layer, and a second conductive feature through the second dielectric layer having a lower convex surface extending into the first conductive feature, wherein the lower convex surface of the second conductive feature has a tip end extending laterally under a bottom boundary of the second dielectric layer.
- Taiwan semiconductor manufacturing company, ltd.
- Pin-Wen Chen of Keelung (TW)
- Chia-Han Lai of Zhubei (TW)
- Chih-Wei Chang of Hsinchu (TW)
- Mei-Hui Fu of Hsinchu (TW)
- Ming-Hsing Tsai of Chu-Pei (TW)
- Wei-Jung Lin of Hsinchu (TW)
- Yu-Shih Wang of Tainan (TW)
- Ya-Yi Cheng of Taichung (TW)
- I-Li Chen of Hsinchu (TW)
- H01L21/768
- H01L21/285
- H01L21/3213
- H01L23/535
- CPC H01L21/76895