Taiwan semiconductor manufacturing company, ltd. (20240379425). CONDUCTIVE FEATURE OF SEMICONDUCTOR DEVICE AND METHOD OF FORMING SAME simplified abstract

CONDUCTIVE FEATURE OF SEMICONDUCTOR DEVICE AND METHOD OF FORMING SAME

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Bo-Yu Lai of Taipei (TW)

Chin-Szu Lee of Taoyuan (TW)

Szu-Hua Wu of Zhubei (TW)

Shuen-Shin Liang of Hsinchu (TW)

Chia-Hung Chu of Taipei (TW)

Keng-Chu Lin of Ping-Tung (TW)

Sung-Li Wang of Zhubei (TW)

CONDUCTIVE FEATURE OF SEMICONDUCTOR DEVICE AND METHOD OF FORMING SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240379425 titled 'CONDUCTIVE FEATURE OF SEMICONDUCTOR DEVICE AND METHOD OF FORMING SAME

The method described in the abstract involves the formation of a device region over a substrate, followed by the deposition of dielectric and conductive materials to create an interface region.

• Forming a device region over a substrate
• Depositing a first dielectric layer over the device region
• Creating an opening in the first dielectric layer
• Depositing a first conductive material along the opening's surfaces
• Filling the opening with a second conductive material
• Performing a thermal process to form an interface region between the two conductive materials

Potential Applications: - Semiconductor manufacturing - Integrated circuit fabrication - Microelectronics industry

Problems Solved: - Enhancing the conductivity and performance of electronic devices - Improving the reliability and efficiency of semiconductor components

Benefits: - Increased device functionality - Enhanced electrical properties - Improved overall device performance

Commercial Applications: Title: Advanced Semiconductor Manufacturing Process for Enhanced Device Performance This technology can be utilized in the production of high-performance electronic devices, leading to improved consumer electronics, telecommunications equipment, and industrial machinery.

Questions about the technology: 1. How does the interface region between the two conductive materials impact device performance? 2. What are the specific advantages of using different conductive materials in the fabrication process?

Original Abstract Submitted

a method includes forming a device region over a substrate; forming a first dielectric layer over the device region; forming an opening in the first dielectric layer; conformally depositing a first conductive material along sidewalls and bottom surfaces of the opening; depositing a second conductive material on the first conductive material to fill the opening, wherein the second conductive material is different from the first conductive material; and performing a first thermal process to form an interface region extending from a first region of the first conductive material to a second region of the second conductive material, wherein the interface region includes a homogeneous mixture of the first conductive material and the second conductive material.