Taiwan semiconductor manufacturing company, ltd. (20240379423). BARRIER LAYER FOR AN INTERCONNECT STRUCTURE simplified abstract

BARRIER LAYER FOR AN INTERCONNECT STRUCTURE

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Chien Chang of Hsinchu (TW)

Min-Hsiu Hung of Tainan City (TW)

Yu-Hsiang Liao of Hsinchu City (TW)

Yu-Shiuan Wang of Taipei City (TW)

Tai Min Chang of Taipei City (TW)

Kan-Ju Lin of Kaohsiung City (TW)

Chih-Shiun Chou of Hsinchu City (TW)

Hung-Yi Huang of Hsin-chu City (TW)

Chih-Wei Chang of Hsin-Chu (TW)

Ming-Hsing Tsai of Chu-Pei City (TW)

BARRIER LAYER FOR AN INTERCONNECT STRUCTURE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240379423 titled 'BARRIER LAYER FOR AN INTERCONNECT STRUCTURE

Simplified Explanation: A barrier layer is formed in a portion of the sidewalls of a recess before an interconnect structure is created in the recess. The barrier layer is formed using a plasma-based deposition process, where a precursor reacts with a silicon-rich surface to create the barrier layer.

• The barrier layer is formed by consuming a portion of the silicon-rich surface of the sidewalls during the plasma treatment.
• This process minimizes the cross-sectional width reduction in the recess from the barrier layer while enhancing adhesion in the recess.

Key Features and Innovation:

• Formation of a barrier layer in a portion of the sidewalls of a recess before interconnect structure formation.
• Plasma-based deposition process used to create the barrier layer.
• Precursor reacts with silicon-rich surface to form the barrier layer.
• Consumption of silicon-rich surface during plasma treatment to minimize width reduction in the recess.

Potential Applications:

• Semiconductor manufacturing
• Microelectronics industry
• Integrated circuit fabrication

Problems Solved:

• Enhances adhesion in the recess
• Minimizes cross-sectional width reduction in the recess

Benefits:

• Improved interconnect structure reliability
• Enhanced performance of semiconductor devices
• Increased durability of integrated circuits

Commercial Applications: Potential commercial applications include:

• Semiconductor fabrication companies
• Microelectronics manufacturers
• Integrated circuit design firms

Questions about Barrier Layer Formation: 1. How does the plasma-based deposition process enhance the adhesion of the barrier layer? 2. What are the specific benefits of minimizing the cross-sectional width reduction in the recess?

Frequently Updated Research: Stay updated on the latest advancements in plasma-based deposition processes for barrier layer formation in semiconductor manufacturing.

Original Abstract Submitted

a barrier layer is formed in a portion of a thickness of sidewalls in a recess prior to formation of an interconnect structure in the recess. the barrier layer is formed in the portion of the thickness of the sidewalls by a plasma-based deposition operation, in which a precursor reacts with a silicon-rich surface to form the barrier layer. the barrier layer is formed in the portion of the thickness of the sidewalls in that the precursor consumes a portion of the silicon-rich surface of the sidewalls as a result of the plasma treatment. this enables the barrier layer to be formed in a manner in which the cross-sectional width reduction in the recess from the barrier layer is minimized while enabling the barrier layer to be used to promote adhesion in the recess.