Taiwan semiconductor manufacturing company, ltd. (20240379422). FIELD EFFECT TRANSISTOR WITH MULTI-METAL GATE VIA AND METHOD simplified abstract
Contents
FIELD EFFECT TRANSISTOR WITH MULTI-METAL GATE VIA AND METHOD
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Sheng-Tsung Wang of Hsinchu (TW)
Cheng-Chi Chuang of Hsinchu (TW)
FIELD EFFECT TRANSISTOR WITH MULTI-METAL GATE VIA AND METHOD - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240379422 titled 'FIELD EFFECT TRANSISTOR WITH MULTI-METAL GATE VIA AND METHOD
The abstract describes a device with a gate structure surrounding a vertical stack of nanostructure semiconductor channels, with a source/drain adjacent to the stack. The device also includes a gate via in contact with the gate structure, consisting of a metal liner layer with lower flowability and a metal fill layer with higher flowability.
- The device features a gate structure wrapping around nanostructure semiconductor channels.
- A source/drain is in contact with the nanostructure semiconductor channels.
- A gate via, with a metal liner layer and a metal fill layer, is in contact with the gate structure.
- The metal fill layer has higher flowability than the metal liner layer.
Potential Applications: - This technology could be used in advanced semiconductor devices for improved performance. - It may find applications in the development of high-speed and low-power electronic devices.
Problems Solved: - Enhances the efficiency and functionality of semiconductor devices. - Provides a more reliable and stable connection between components.
Benefits: - Improved performance and efficiency in semiconductor devices. - Enhanced reliability and stability in electronic components.
Commercial Applications: - This technology could be valuable in the semiconductor industry for the development of cutting-edge electronic devices with enhanced performance capabilities.
Questions about the technology: 1. How does the metal fill layer with higher flowability contribute to the device's functionality?
- The metal fill layer with higher flowability allows for better conductivity and improved performance of the device.
2. What advantages does the gate structure wrapping around nanostructure semiconductor channels offer?
- The gate structure provides better control and efficiency in the operation of the semiconductor device.
Original Abstract Submitted
a device includes a substrate, a gate structure wrapping around a vertical stack of nanostructure semiconductor channels, and a source/drain abutting the vertical stack and in contact with the nanostructure semiconductor channels. the device includes a gate via in contact with the first gate structure. the gate via includes a metal liner layer having a first flowability, and a metal fill layer having a second flowability higher than the first flowability.
