Taiwan semiconductor manufacturing company, ltd. (20240379417). INTERCONNECT STRUCTURE AND METHOD OF FORMING THE SAME simplified abstract

INTERCONNECT STRUCTURE AND METHOD OF FORMING THE SAME

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Bo-Jiun Lin of Hsinchu County (TW)

Tung-Ying Lee of Hsinchu City (TW)

Yu-Chao Lin of Hsinchu City (TW)

INTERCONNECT STRUCTURE AND METHOD OF FORMING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240379417 titled 'INTERCONNECT STRUCTURE AND METHOD OF FORMING THE SAME

The patent application describes an interconnect structure consisting of multiple conductive features, dielectric layers, vias, and barrier structures.

• The interconnect structure includes a first conductive feature in a dielectric layer, a second conductive feature over the first feature and dielectric layer, a via between the two conductive features, and a barrier structure lining various surfaces within the structure.

• The barrier structure covers the sidewall and a portion of the bottom surface of the second conductive feature, the sidewall of the via, a portion of the top surface of the first conductive feature, and the top surface of the first dielectric layer.

• The interconnect structure aims to provide efficient and reliable connections between different conductive features in electronic devices.

• By using barrier structures, the patent application seeks to enhance the performance and longevity of the interconnect structure.

• The innovation in this patent application lies in the specific design and arrangement of the conductive features, vias, and barrier structures to optimize electrical connections in electronic devices.

Potential Applications: - This technology can be applied in semiconductor manufacturing for integrated circuits. - It can be used in the production of various electronic devices such as smartphones, computers, and tablets.

Problems Solved: - Provides a solution for improving the reliability and efficiency of interconnect structures in electronic devices. - Addresses issues related to signal integrity and electrical performance in semiconductor devices.

Benefits: - Enhanced electrical connectivity and signal transmission. - Improved durability and longevity of electronic devices. - Increased efficiency in semiconductor manufacturing processes.

Commercial Applications: Title: Advanced Interconnect Structures for Semiconductor Devices This technology can be utilized in the production of high-performance electronic devices, leading to improved product quality and reliability. The market implications include potential advancements in the semiconductor industry and the development of more efficient electronic devices.

Prior Art: Readers can explore prior art related to interconnect structures in semiconductor devices by researching existing patents and publications in the field of semiconductor manufacturing and electronic packaging.

Frequently Updated Research: Stay updated on the latest advancements in interconnect structures for semiconductor devices by following research publications in semiconductor engineering and materials science journals.

Questions about Interconnect Structures for Semiconductor Devices: 1. What are the key challenges in developing advanced interconnect structures for semiconductor devices?

  - Developing advanced interconnect structures for semiconductor devices involves overcoming challenges related to material compatibility, manufacturing processes, and signal integrity.

2. How do barrier structures contribute to the performance of interconnect structures in electronic devices?

  - Barrier structures play a crucial role in preventing material diffusion, enhancing adhesion between different layers, and improving the overall reliability of interconnect structures in electronic devices.

Original Abstract Submitted

provided is an interconnect structure including: a first conductive feature, disposed in a first dielectric layer; a second conductive feature, disposed over the first conductive feature and the first dielectric layer; a via, disposed between the first and second conductive features and being in direct contact with the first and second conductive features; and a barrier structure, lining a sidewall and a portion of a bottom surface of the second conductive feature, a sidewall of the via, a portion of a top surface of the first conductive feature, and a top surface of the first dielectric layer.