Taiwan semiconductor manufacturing company, ltd. (20240379408). SOURCE/DRAIN ISOLATION STRUCTURE AND METHODS THEREOF simplified abstract

SOURCE/DRAIN ISOLATION STRUCTURE AND METHODS THEREOF

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Lin-Yu Huang of Hsinchu (TW)

Sheng-Tsung Wang of Hsinchu (TW)

Chia-Hao Chang of Hsinchu City (TW)

Tien-Lu Lin of Hsinchu City (TW)

Yu-Ming Lin of Hsinchu City (TW)

Chih-Hao Wang of Hsinchu County (TW)

SOURCE/DRAIN ISOLATION STRUCTURE AND METHODS THEREOF - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240379408 titled 'SOURCE/DRAIN ISOLATION STRUCTURE AND METHODS THEREOF

Simplified Explanation:

The patent application describes a method and structure for providing source/drain isolation in a device by using a masking layer and metal layers.

• First source/drain region is adjacent to a second source/drain region.
• Masking layer is deposited between the first and second source/drain regions.
• Masking layer is etched to form an L-shaped structure.
• First metal layer is formed over the first source/drain region, and a second metal layer is formed over the second part of the second source/drain region.

Key Features and Innovation:

• Use of a masking layer to isolate source/drain regions.
• Etching of the masking layer to create an L-shaped structure.
• Deposition of metal layers over the exposed source/drain regions.

Potential Applications:

• Semiconductor devices
• Integrated circuits
• Microelectronics

Problems Solved:

• Source/drain isolation in devices
• Improving device performance
• Enhancing device reliability

Benefits:

• Improved source/drain isolation
• Enhanced device functionality
• Increased device longevity

Commercial Applications:

The technology can be utilized in the semiconductor industry for manufacturing advanced integrated circuits with improved source/drain isolation, leading to more efficient and reliable electronic devices.

Questions about Source/Drain Isolation:

1. How does the masking layer contribute to the isolation of the source/drain regions? 2. What are the advantages of using metal layers in this structure for source/drain isolation?

Original Abstract Submitted

a method and structure directed to providing a source/drain isolation structure includes providing a device having a first source/drain region adjacent to a second source/drain region. a masking layer is deposited between the first and second source/drain regions and over an exposed first part of the second source/drain region. after depositing the masking layer, a first portion of an ild layer disposed on either side of the masking layer is etched, without substantial etching of the masking layer, to expose a second part of the second source/drain region and to expose the first source/drain region. after etching the first portion of the ild layer, the masking layer is etched to form an l-shaped masking layer. after forming the l-shaped masking layer, a first metal layer is formed over the exposed first source/drain region and a second metal layer is formed over the exposed second part of the second source/drain region.