Taiwan semiconductor manufacturing company, ltd. (20240379381). PERFORMING ANNEALING PROCESS TO IMPROVE FIN QUALITY OF A FINFET SEMICONDUCTOR simplified abstract

PERFORMING ANNEALING PROCESS TO IMPROVE FIN QUALITY OF A FINFET SEMICONDUCTOR

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Tzung-Yi Tsai of Taoyuan City (TW)

Yen-Ming Chen of Chu-Pei City (TW)

Tsung-Lin Lee of Hsinchu City (TW)

Po-Kang Ho of Taoyuan City (TW)

PERFORMING ANNEALING PROCESS TO IMPROVE FIN QUALITY OF A FINFET SEMICONDUCTOR - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240379381 titled 'PERFORMING ANNEALING PROCESS TO IMPROVE FIN QUALITY OF A FINFET SEMICONDUCTOR

Simplified Explanation: The semiconductor device described in the patent application features a fin structure that extends vertically upwards, with a reduced lateral dimension. A semiconductor layer is then formed on the fin structure, followed by an annealing process. Subsequently, a dielectric layer is applied over the fin structure.

• The semiconductor device has a fin structure that protrudes vertically upwards.
• The lateral dimension of the fin structure is reduced.
• A semiconductor layer is formed on the fin structure after reducing the lateral dimension.
• An annealing process is performed on the semiconductor device after forming the semiconductor layer.
• A dielectric layer is formed over the fin structure after the annealing process.

Potential Applications: This technology could be applied in the manufacturing of advanced semiconductor devices for various electronic applications, such as in integrated circuits and microprocessors.

Problems Solved: This innovation addresses the need for improved semiconductor device structures with enhanced performance and efficiency.

Benefits: The benefits of this technology include increased functionality, higher performance, and potentially reduced power consumption in semiconductor devices.

Commercial Applications: The technology could have significant commercial implications in the semiconductor industry, leading to the development of more advanced and efficient electronic devices.

Questions about Semiconductor Devices: 1. How does the reduced lateral dimension of the fin structure impact the overall performance of the semiconductor device? 2. What are the specific advantages of using an annealing process in conjunction with the formation of the semiconductor layer on the fin structure?

Original Abstract Submitted

a semiconductor device is provided. the semiconductor device has a fin structure that protrudes vertically upwards. a lateral dimension of the fin structure is reduced. a semiconductor layer is formed on the fin structure after the reducing of the lateral dimension. an annealing process is performed to the semiconductor device after the forming of the semiconductor layer. a dielectric layer is formed over the fin structure after the performing of the annealing process.