Taiwan semiconductor manufacturing company, ltd. (20240379373). HIGH ASPECT RATIO BOSCH DEEP ETCH simplified abstract
Contents
HIGH ASPECT RATIO BOSCH DEEP ETCH
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Yu-Hsing Chang of Taipei City (TW)
Ming Chyi Liu of Hsinchu City (TW)
Shih-Chang Liu of Alian Township (TW)
HIGH ASPECT RATIO BOSCH DEEP ETCH - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240379373 titled 'HIGH ASPECT RATIO BOSCH DEEP ETCH
The semiconductor device described in the patent application includes a semiconductor substrate with a trench that has scallops along the sidewalls. An oxide layer lines the bottom surface and sidewalls of the trench, with varying thicknesses at different depths.
- The semiconductor device features a trench with scallops along the sidewalls.
- An oxide layer lines the bottom surface and sidewalls of the trench.
- The oxide layer has varying thicknesses at different depths within the trench.
- The varying thicknesses step down at discrete increments as the depth into the trench increases.
Potential Applications: - This technology could be used in the manufacturing of advanced semiconductor devices. - It may find applications in the development of high-performance electronic components.
Problems Solved: - Provides improved control over oxide layer thickness within the trench. - Enhances the performance and reliability of semiconductor devices.
Benefits: - Increased efficiency in semiconductor device manufacturing. - Improved functionality and longevity of electronic components.
Commercial Applications: - This technology could be valuable in the production of cutting-edge electronic devices. - It may have implications for the semiconductor industry in terms of enhancing product performance.
Questions about the technology: 1. How does the varying thickness of the oxide layer impact the performance of the semiconductor device? 2. What are the potential cost savings associated with implementing this technology in semiconductor manufacturing processes?
Frequently Updated Research: - Stay updated on advancements in semiconductor device manufacturing techniques that could complement this technology.
Original Abstract Submitted
some embodiments pertain to a semiconductor device. the semiconductor device includes a semiconductor substrate including a trench extending downward into an upper surface of the semiconductor substrate. the trench includes a bottom surface and a plurality of scallops along sidewalls of the trench. an oxide layer lines the bottom surface and the sidewalls of the trench. the oxide layer has varying thicknesses along the sidewalls of the trench at different depths. the varying thicknesses step down at discrete increments as a depth into the trench increases.
