Taiwan semiconductor manufacturing company, ltd. (20240379367). INTEGRATED CIRCUIT WITH NANOSHEET TRANSISTORS WITH METAL GATE PASSIVATION simplified abstract

INTEGRATED CIRCUIT WITH NANOSHEET TRANSISTORS WITH METAL GATE PASSIVATION

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Mao-Lin Huang of Hsinchu (TW)

Lung-Kun Chu of Hsinchu (TW)

Chung-Wei Hsu of Hsinchu (TW)

Jia-Ni Yu of Hsinchu (TW)

Kuo-Cheng Chiang of Hsinchu (TW)

Kuan-Lun Cheng of Hsinchu (TW)

Chih-Hao Wang of Hsinchu (TW)

INTEGRATED CIRCUIT WITH NANOSHEET TRANSISTORS WITH METAL GATE PASSIVATION - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240379367 titled 'INTEGRATED CIRCUIT WITH NANOSHEET TRANSISTORS WITH METAL GATE PASSIVATION

• • Simplified Explanation:**

The patent application describes a method for processing an integrated circuit by forming gate all around transistors and core gate all around transistors. A metal gate layer is deposited for the p-type transistors, and a passivation layer is formed in-situ with the metal gate layer of the p-type transistor.

• • Key Features and Innovation:**

- Formation of n-type and p-type gate all around transistors - Deposition of a metal gate layer for p-type transistors - In-situ formation of a passivation layer with the metal gate layer of p-type transistors

• • Potential Applications:**

- Semiconductor manufacturing - Integrated circuit design - Electronics industry

• • Problems Solved:**

- Enhancing the performance of integrated circuits - Improving the reliability of transistors - Simplifying the manufacturing process

• • Benefits:**

- Increased efficiency of integrated circuits - Enhanced durability of transistors - Cost-effective manufacturing process

• • Commercial Applications:**

Potential commercial applications include the production of advanced electronic devices, semiconductor components, and integrated circuits for various industries such as telecommunications, computing, and consumer electronics.

• • Prior Art:**

Readers can explore prior art related to this technology by researching advancements in semiconductor manufacturing, gate all around transistors, and passivation layers in integrated circuits.

• • Frequently Updated Research:**

Stay updated on the latest developments in semiconductor technology, integrated circuit design, and materials science to understand the evolving landscape of this innovation.

• • Questions about Integrated Circuit Processing:**

1. How does the formation of gate all around transistors improve the performance of integrated circuits? 2. What are the potential challenges in implementing a metal gate layer for p-type transistors in semiconductor manufacturing processes?

Original Abstract Submitted

a method for processing an integrated circuit includes forming n-type and p-type gate all around transistors and core gate all around transistors. the method deposits a metal gate layer for the p-type transistors. the method forms a passivation layer in-situ with the metal gate layer of the p-type transistor.