Taiwan semiconductor manufacturing company, ltd. (20240379364). SEMICONDUCTOR DEVICES simplified abstract

SEMICONDUCTOR DEVICES

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Yu-Jiun Peng of Hsinchu (TW)

Hsiu-Hao Tsao of Taichung (TW)

Shu-Han Chen of Hsinchu (TW)

Chang-Jhih Syu of Hsinchu (TW)

Kuo-Feng Yu of Zhudong Township (TW)

Jian-Hao Chen of Hsinchu (TW)

Chih-Hao Yu of Tainan City (TW)

Chang-Yun Chang of Taipei (TW)

SEMICONDUCTOR DEVICES - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240379364 titled 'SEMICONDUCTOR DEVICES

The structure described in the patent application includes a semiconductor substrate with a gate spacer, a gate stack, and an epitaxial source/drain region.

• The gate spacer has an upper portion with a decreasing width and a lower portion with a constant width.
• The gate stack extends along a sidewall of the gate spacer and the semiconductor substrate.
• The epitaxial source/drain region is adjacent to another sidewall of the gate spacer.

Potential Applications: - This technology could be used in the manufacturing of advanced semiconductor devices. - It may find applications in the development of high-performance integrated circuits.

Problems Solved: - Provides a more efficient and precise method for creating semiconductor structures. - Enhances the performance and functionality of semiconductor devices.

Benefits: - Improved control over the semiconductor structure dimensions. - Enhanced overall performance and reliability of semiconductor devices.

Commercial Applications: - This technology could be valuable in the semiconductor industry for producing cutting-edge electronic devices with enhanced performance capabilities.

Frequently Updated Research: - Stay updated on the latest advancements in semiconductor manufacturing techniques to improve the efficiency and effectiveness of this technology.

Questions about the Structure: 1. How does the gate spacer design impact the overall performance of the semiconductor device? 2. What are the potential challenges in implementing this technology in large-scale semiconductor production processes?

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Original Abstract Submitted

in an embodiment, a structure includes: a semiconductor substrate; a gate spacer over the semiconductor substrate, the gate spacer having an upper portion and a lower portion, a first width of the upper portion decreasing continually in a first direction extending away from a top surface of the semiconductor substrate, a second width of the lower portion being constant along the first direction; a gate stack extending along a first sidewall of the gate spacer and the top surface of the semiconductor substrate; and an epitaxial source/drain region adjacent a second sidewall of the gate spacer.