Taiwan semiconductor manufacturing company, ltd. (20240379361). STRUCTURE AND FORMATION METHOD OF SEMICONDUCTOR DEVICE STRUCTURE WITH THROUGH SEMICONDUCTOR VIA simplified abstract
Contents
STRUCTURE AND FORMATION METHOD OF SEMICONDUCTOR DEVICE STRUCTURE WITH THROUGH SEMICONDUCTOR VIA
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Chih-Chuan Su of Hsinchu City (TW)
Liang-Wei Wang of Hsinchu City (TW)
Tsung-Chieh Hsiao of Changhua County (TW)
STRUCTURE AND FORMATION METHOD OF SEMICONDUCTOR DEVICE STRUCTURE WITH THROUGH SEMICONDUCTOR VIA - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240379361 titled 'STRUCTURE AND FORMATION METHOD OF SEMICONDUCTOR DEVICE STRUCTURE WITH THROUGH SEMICONDUCTOR VIA
Simplified Explanation:
This patent application describes a method for creating a semiconductor device structure by forming an opening in a p-type doped semiconductor body, introducing n-type dopants to create a modified portion near the opening, and then adding a dielectric layer and a conductive structure to fill the opening.
- The method involves forming an opening in a p-type doped semiconductor body.
- N-type dopants are introduced to create a modified portion near the opening.
- A dielectric layer is formed along the sidewalls and bottom of the opening.
- A conductive structure is then added to fill the opening.
Key Features and Innovation:
- Formation of a semiconductor device structure using a combination of p-type and n-type doping.
- Inclusion of a dielectric layer to improve the performance and reliability of the device.
- Use of a conductive structure to fill the opening and complete the device structure.
Potential Applications:
- Semiconductor manufacturing
- Electronics industry
- Integrated circuits
Problems Solved:
- Enhancing the performance of semiconductor devices
- Improving the reliability of semiconductor structures
Benefits:
- Increased efficiency in semiconductor device production
- Enhanced functionality of electronic devices
- Improved overall performance and reliability
Commercial Applications:
The technology described in this patent application could have significant commercial applications in the semiconductor manufacturing industry, leading to more efficient and reliable electronic devices.
Questions about Semiconductor Device Structure Formation:
1. How does the introduction of n-type dopants impact the performance of the semiconductor device structure? 2. What are the potential challenges in scaling up this method for mass production in the semiconductor industry?
Original Abstract Submitted
a semiconductor device structure and a formation method are provided. the method includes forming an opening in a semiconductor body, and the semiconductor body is p-type doped. the method also includes introducing n-type dopants into the semiconductor body to form a modified portion near the opening, and the modified portion is p-type doped. the method further includes forming a dielectric layer along the sidewalls and the bottom of the opening. in addition, the method includes forming a conductive structure over the dielectric layer to fill the opening.
