Taiwan semiconductor manufacturing company, ltd. (20240379359). Patterning Semiconductor Devices and Structures Resulting Therefrom simplified abstract
Contents
Patterning Semiconductor Devices and Structures Resulting Therefrom
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Sung-En Lin of Xionglin Township (TW)
Chia-Cheng Chao of Hsinchu (TW)
Patterning Semiconductor Devices and Structures Resulting Therefrom - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240379359 titled 'Patterning Semiconductor Devices and Structures Resulting Therefrom
The method described in the abstract involves depositing a first mask over a target layer, forming first and second mandrels over the first mask, forming first spacers on the first mandrel and second spacers on the second mandrel, and selectively removing the second spacers while masking the first spacers. Masking the first spacers involves covering them with a second mask and a capping layer made of carbon. The method also includes patterning the first mask and transferring the pattern to the target layer by masking the first mask with the second mandrel, the first mandrel, and the first spacers.
- Depositing a first mask over a target layer
- Forming first and second mandrels over the first mask
- Forming first spacers on the first mandrel and second spacers on the second mandrel
- Selectively removing the second spacers while masking the first spacers
- Masking the first spacers with a second mask and a capping layer made of carbon
- Patterning the first mask and transferring the pattern to the target layer
Potential Applications: - Semiconductor manufacturing - Nanotechnology - Microelectronics
Problems Solved: - Improved precision in patterning processes - Enhanced control over spacer formation - Increased efficiency in semiconductor fabrication
Benefits: - Higher quality semiconductor devices - Cost-effective manufacturing processes - Enhanced performance of electronic components
Commercial Applications: Title: Advanced Semiconductor Patterning Method for Enhanced Device Performance This technology can be utilized in the production of advanced semiconductor devices, leading to improved performance and reliability. The method offers a more precise and efficient way of patterning semiconductor materials, making it ideal for high-tech industries such as electronics, telecommunications, and computing.
Prior Art: Researchers can explore prior art related to semiconductor patterning methods, spacer formation techniques, and carbon capping layers in semiconductor manufacturing processes to gain a deeper understanding of the innovation presented in this patent application.
Frequently Updated Research: Researchers in the field of semiconductor manufacturing are constantly exploring new methods and materials to enhance device performance and efficiency. Stay updated on the latest advancements in semiconductor patterning techniques and materials to remain at the forefront of technological innovation.
Questions about the Advanced Semiconductor Patterning Method: 1. How does this method improve the precision of semiconductor patterning processes? 2. What are the potential applications of this technology beyond semiconductor manufacturing?
Original Abstract Submitted
a method includes depositing a first mask over a target layer; forming a first mandrel and a second mandrel over the first mask; forming first spacers on the first mandrel and second spacers on the second mandrel; and selectively removing the second spacers while masking the first spacers. masking the first spacers comprising covering the first spacers with a second mask and a capping layer over the second mask, and the capping layer comprises carbon. the method further includes patterning the first mask and transferring a pattern of the first mask to the target layer. patterning the first mask comprises masking the first mask with the second mandrel, the first mandrel, and the first spacers.
