Taiwan semiconductor manufacturing company, ltd. (20240379358). METHODS FOR INTEGRATED CIRCUIT DESIGN AND FABRICATION simplified abstract

METHODS FOR INTEGRATED CIRCUIT DESIGN AND FABRICATION

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Tsong-Hua Ou of Taipei City (TW)

Ken-Hsien Hsieh of Taipei City (TW)

Shih-Ming Chang of Hsinchu County (TW)

Wen-Chun Huang of Taipei City (TW)

Chih-Ming Lai of Hsinchu City (TW)

Ru-Gun Liu of Hsinchu County (TW)

Tsai-Sheng Gau of Hsinchu City (TW)

METHODS FOR INTEGRATED CIRCUIT DESIGN AND FABRICATION - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240379358 titled 'METHODS FOR INTEGRATED CIRCUIT DESIGN AND FABRICATION

The present disclosure describes a method for patterning a target material layer over a semiconductor substrate. This method involves forming a spacer feature over the target material layer using a first sub-layout and performing a photolithographic patterning process using a second sub-layout to create a first feature. A portion of the first feature extends over the spacer feature. The method also includes removing the portion of the first feature that extends over the spacer feature and then removing the spacer feature.

• Formation of a spacer feature over a target material layer using a first sub-layout.
• Photolithographic patterning process to create a first feature extending over the spacer feature.
• Removal of the portion of the first feature that extends over the spacer feature.
• Removal of the spacer feature.
• Provides patterned semiconductor wafers.

Potential Applications: - Semiconductor manufacturing - Microelectronics industry - Nanotechnology research

Problems Solved: - Precise patterning of target material layers - Enhancing semiconductor device performance - Improving manufacturing processes

Benefits: - Increased accuracy in patterning - Enhanced semiconductor device functionality - Streamlined manufacturing processes

Commercial Applications: Title: Advanced Semiconductor Patterning Method for Enhanced Device Performance This technology can be utilized in the semiconductor industry for producing high-performance electronic devices with improved functionality and efficiency. It can also benefit research institutions focusing on nanotechnology advancements.

Prior Art: Readers can explore prior art related to semiconductor patterning methods, photolithography processes, and spacer feature formation in semiconductor manufacturing.

Frequently Updated Research: Stay updated on the latest advancements in semiconductor patterning techniques, photolithography innovations, and nanotechnology research for potential improvements in device performance and manufacturing efficiency.

Questions about Semiconductor Patterning: 1. How does this method compare to traditional semiconductor patterning techniques? This method offers enhanced precision and control over patterning compared to traditional techniques, leading to improved device performance. 2. What are the potential challenges faced when implementing this semiconductor patterning method? Implementing this method may require specialized equipment and expertise, which could pose challenges for some manufacturers.

Original Abstract Submitted

the present disclosure provides a method of patterning a target material layer over a semiconductor substrate. the method includes steps of forming a spacer feature over the target material layer using a first sub-layout and performing a photolithographic patterning process using a second sub-layout to form a first feature. a portion of the first feature extends over the spacer feature. the method further includes steps of removing the portion of the first feature extending over the spacer feature and removing the spacer feature. other methods and associated patterned semiconductor wafers are also provided herein.