Taiwan semiconductor manufacturing company, ltd. (20240379357). IMPLANTATION MASK FORMATION simplified abstract
Contents
IMPLANTATION MASK FORMATION
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Chun-Wei Chang of Tainan City (TW)
Ching-Sen Kuo of Taipei City (TW)
Feng-Jia Shiu of Hsinchu County (TW)
IMPLANTATION MASK FORMATION - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240379357 titled 'IMPLANTATION MASK FORMATION
The abstract of this patent application describes techniques for forming implantation masks with increased aspect ratios using non-lithography methods. This involves creating a resist hardening layer on the mask to enhance the pattern's height and reduce its width, resulting in a higher aspect ratio that minimizes the risk of pattern collapse.
- Formation of implantation masks with increased aspect ratios
- Use of non-lithography techniques to enhance pattern height
- Application of resist hardening layer to reduce pattern width
- Minimization of pattern collapse during mask formation
- Creation of ultra-high aspect ratio patterns in implantation masks
Potential Applications: - Semiconductor manufacturing - Microelectronics industry - Nanotechnology research
Problems Solved: - Pattern collapse during mask formation - Limitations in aspect ratio of implantation masks
Benefits: - Improved precision in pattern formation - Enhanced quality of implantation masks - Increased efficiency in semiconductor fabrication processes
Commercial Applications: Title: Advanced Implantation Mask Formation Techniques for Semiconductor Manufacturing This technology can be utilized in the production of high-performance electronic devices, such as microprocessors and memory chips. It offers a competitive advantage to companies in the semiconductor industry by enabling the fabrication of complex patterns with superior quality and accuracy.
Prior Art: Researchers and engineers in the field of semiconductor manufacturing have explored various methods to enhance the aspect ratios of implantation masks. Prior studies have focused on lithography techniques and materials optimization to achieve similar results.
Frequently Updated Research: Ongoing research in semiconductor manufacturing continues to investigate novel approaches for improving the aspect ratios of implantation masks. Emerging technologies and materials are being explored to further enhance the precision and efficiency of pattern formation processes.
Questions about Implantation Mask Formation Techniques: 1. How do non-lithography methods compare to traditional lithography techniques in enhancing aspect ratios of implantation masks? Non-lithography methods offer advantages in terms of simplicity and cost-effectiveness, making them attractive options for improving aspect ratios in mask formation.
2. What are the potential challenges associated with implementing resist hardening layers in implantation mask fabrication? Resist hardening layers may introduce additional process steps and material considerations, which could impact overall manufacturing efficiency and cost.
Original Abstract Submitted
implantation mask formation techniques described herein include increasing an initial aspect ratio of a pattern in an implantation mask by non-lithography techniques, which may include forming a resist hardening layer on the implantation mask. the pattern may be formed by photolithography techniques to the initial aspect ratio that reduces or minimizes the likelihood of pattern collapse during formation of the pattern. then, the resist hardening layer is formed on the implantation mask to increase the height of the pattern and reduce the width of the pattern, which increases the aspect ratio between the height of the openings or trenches and the width of the openings or trenches of the pattern. in this way, the pattern in the implantation mask may be formed to an ultra-high aspect ratio in a manner that reduces or minimizes the likelihood of pattern collapse during formation of the pattern.
