Taiwan semiconductor manufacturing company, ltd. (20240379350). FORMING NITROGEN-CONTAINING LAYERS AS OXIDATION BLOCKING LAYERS simplified abstract
Contents
FORMING NITROGEN-CONTAINING LAYERS AS OXIDATION BLOCKING LAYERS
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Wan-Yi Kao of Baoshan Township (TW)
FORMING NITROGEN-CONTAINING LAYERS AS OXIDATION BLOCKING LAYERS - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240379350 titled 'FORMING NITROGEN-CONTAINING LAYERS AS OXIDATION BLOCKING LAYERS
The patent application describes a method for forming a dielectric barrier layer on a wafer, consisting of a silicon layer, an oxide layer, and an annealed layer in an ammonia environment to create a barrier between the silicon and oxide layers.
- Silicon layer is formed on a wafer
- Oxide layer is formed in contact with the silicon layer
- Wafer is annealed in an environment containing ammonia
- Dielectric barrier layer is formed, containing silicon and nitrogen
Potential Applications: - Semiconductor manufacturing - Integrated circuit fabrication - Electronics industry
Problems Solved: - Enhancing the insulation properties of the layers - Improving the reliability and performance of electronic devices
Benefits: - Increased efficiency in semiconductor production - Enhanced durability of integrated circuits - Improved functionality of electronic components
Commercial Applications: Title: "Advanced Dielectric Barrier Layer Technology for Semiconductor Manufacturing" This technology can be utilized in the production of various electronic devices, such as smartphones, computers, and automotive electronics, leading to more reliable and high-performance products in the market.
Questions about the technology: 1. How does the presence of nitrogen in the dielectric barrier layer impact its properties? - The addition of nitrogen enhances the insulation capabilities of the layer, improving the overall performance of the electronic device. 2. What are the specific steps involved in the annealing process in an ammonia environment? - The annealing process involves heating the wafer in the presence of ammonia to facilitate the formation of the dielectric barrier layer.
Original Abstract Submitted
a method includes forming a silicon layer on a wafer, forming an oxide layer in contact with the silicon layer, and, after the oxide layer is formed, annealing the wafer in an environment comprising ammonia (nh) to form a dielectric barrier layer between, and in contact with, the silicon layer and the oxide layer. the dielectric barrier layer comprises silicon and nitrogen.
