Taiwan semiconductor manufacturing company, ltd. (20240379348). Deposition Process for Forming Semiconductor Device and System simplified abstract
Contents
Deposition Process for Forming Semiconductor Device and System
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Chung-Ting Ko of Kaohsiung City (TW)
Deposition Process for Forming Semiconductor Device and System - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240379348 titled 'Deposition Process for Forming Semiconductor Device and System
The method described in the abstract involves depositing a dielectric material within a trench on a semiconductor substrate using an atomic layer deposition (ALD) process.
- The first precursor of the dielectric material is flowed into the deposition chamber as a gas phase.
- The second precursor of the dielectric material is also flowed into the deposition chamber as a gas phase.
- The pressure and temperature within the deposition chamber are controlled so that the second precursor condenses on surfaces within the trench as a liquid phase with capillarity.
Potential Applications: - This method can be used in the semiconductor industry for fabricating advanced integrated circuits. - It can also be applied in the production of microelectromechanical systems (MEMS) and nanoelectromechanical systems (NEMS).
Problems Solved: - Enables precise deposition of dielectric materials within narrow trenches on semiconductor substrates. - Facilitates the manufacturing of high-performance electronic devices with improved insulation properties.
Benefits: - Enhanced control over the deposition process leading to higher device performance. - Increased efficiency and reliability in the fabrication of semiconductor components.
Commercial Applications: Title: Advanced Dielectric Deposition Method for Semiconductor Manufacturing This technology can be utilized by semiconductor manufacturers to enhance the quality and performance of their products, leading to increased competitiveness in the market. The method can also find applications in research institutions and laboratories working on cutting-edge semiconductor technologies.
Questions about the technology: 1. How does the capillarity of the liquid phase of the second precursor contribute to the deposition process? 2. What are the specific advantages of using an ALD process for depositing dielectric materials in semiconductor manufacturing?
Original Abstract Submitted
a method includes placing a semiconductor substrate in a deposition chamber, wherein the semiconductor substrate includes a trench, and performing an atomic layer deposition (ald) process to deposit a dielectric material within the trench, including flowing a first precursor of the dielectric material into the deposition chamber as a gas phase; flowing a second precursor of the dielectric material into the deposition chamber as a gas phase; and controlling the pressure and temperature within the deposition chamber such that the second precursor condenses on surfaces within the trench as a liquid phase of the second precursor, wherein the liquid phase of the second precursor has capillarity.
