Taiwan semiconductor manufacturing company, ltd. (20240379346). FORMING LOW-STRESS SILICON NITRIDE LAYER THROUGH HYDROGEN TREATMENT simplified abstract
Contents
FORMING LOW-STRESS SILICON NITRIDE LAYER THROUGH HYDROGEN TREATMENT
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Wei-Che Hsieh of New Taipei City (TW)
Ching Yu Huang of Hsinchu (TW)
Hsin-Hao Yeh of Taipei City (TW)
Chunyao Wang of Zhubei City (TW)
FORMING LOW-STRESS SILICON NITRIDE LAYER THROUGH HYDROGEN TREATMENT - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240379346 titled 'FORMING LOW-STRESS SILICON NITRIDE LAYER THROUGH HYDROGEN TREATMENT
Simplified Explanation: The patent application describes a method for depositing a silicon nitride layer on a wafer in a process chamber.
Key Features and Innovation:
- Placing a wafer into a process chamber
- Depositing a silicon nitride layer on a base layer of the wafer
- Introducing a silicon-containing precursor into the process chamber
- Purging the silicon-containing precursor from the process chamber
- Introducing hydrogen radicals into the process chamber
- Purging the hydrogen radicals from the process chamber
- Introducing a nitrogen-containing precursor into the process chamber
- Purging the nitrogen-containing precursor from the process chamber
Potential Applications: This technology can be used in semiconductor manufacturing, specifically in the production of integrated circuits and other electronic devices.
Problems Solved: This technology addresses the need for precise and controlled deposition of silicon nitride layers on wafers in a manufacturing environment.
Benefits:
- Improved quality and uniformity of silicon nitride layers
- Enhanced performance of electronic devices
- Increased efficiency in semiconductor manufacturing processes
Commercial Applications: The technology can be applied in the semiconductor industry for the production of advanced electronic components, leading to improved device performance and reliability.
Questions about Silicon Nitride Deposition: 1. How does the deposition of silicon nitride layers impact the performance of electronic devices? 2. What are the key factors that influence the quality of silicon nitride deposition on wafers?
Frequently Updated Research: Ongoing research in the field of semiconductor manufacturing continues to explore new methods and materials for improving the deposition processes of silicon nitride layers.
Original Abstract Submitted
a method includes placing a wafer into a process chamber, and depositing a silicon nitride layer on a base layer of the wafer. the process of depositing the silicon nitride layer includes introducing a silicon-containing precursor into the process chamber, purging the silicon-containing precursor from the process chamber, introducing hydrogen radicals into the process chamber, purging the hydrogen radicals from the process chamber; introducing a nitrogen-containing precursor into the process chamber, and purging the nitrogen-containing precursor from the process chamber.
