Taiwan semiconductor manufacturing company, ltd. (20240379344). INTERCONNECT STRUCTURE FOR SEMICONDUCTOR DEVICES simplified abstract
Contents
INTERCONNECT STRUCTURE FOR SEMICONDUCTOR DEVICES
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Guan-Xuan Chen of Taoyuan (TW)
Chia-Yang Hung of Kaohsiung (TW)
Sheng-Liang Pan of Hsinchu (TW)
INTERCONNECT STRUCTURE FOR SEMICONDUCTOR DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240379344 titled 'INTERCONNECT STRUCTURE FOR SEMICONDUCTOR DEVICES
Simplified Explanation: The patent application describes a method for forming a semiconductor device by creating openings in dielectric layers to expose conductive features, cleaning the openings, and filling them with conductive material.
Key Features and Innovation:
- Formation of openings in dielectric layers to expose conductive features
- Ashing process to remove mask layers after etching
- Wet cleaning process to enlarge bottom portion of the openings
- Filling the openings with electrically conductive material
Potential Applications: This technology can be applied in the semiconductor industry for the manufacturing of various electronic devices such as integrated circuits, transistors, and diodes.
Problems Solved: This technology addresses the challenge of efficiently exposing and connecting conductive features in semiconductor devices while ensuring proper cleaning and filling of the openings.
Benefits:
- Improved conductivity and connectivity in semiconductor devices
- Enhanced reliability and performance of electronic components
- Streamlined manufacturing processes for semiconductor devices
Commercial Applications: The technology can be utilized in the production of advanced electronic devices, leading to improved performance and reliability, which can benefit industries such as telecommunications, consumer electronics, and automotive electronics.
Questions about Semiconductor Device Formation: 1. How does the wet cleaning process enhance the opening in the dielectric layer? 2. What are the potential implications of using this method in high-volume semiconductor manufacturing?
Frequently Updated Research: Researchers are continuously exploring new materials and techniques to further enhance the performance and efficiency of semiconductor devices. Stay updated on the latest advancements in the field to leverage cutting-edge technologies for future applications.
Original Abstract Submitted
a method of forming a semiconductor device includes: forming a first conductive feature in a first dielectric layer disposed over a substrate; forming a second dielectric layer over the first dielectric layer; etching the second dielectric layer using a patterned mask layer to form an opening in the second dielectric layer, where the opening exposes the first conductive feature; performing an ashing process to remove the patterned mask layer after the etching; wet cleaning the opening after the ashing process, where the wet cleaning enlarges a bottom portion of the opening; and filling the opening with a first electrically conductive material.
