Taiwan semiconductor manufacturing company, ltd. (20240379270). Perpendicularly Magnetized Ferromagnetic Layers Having an Oxide Interface Allowing for Improved Control of Oxidation simplified abstract

Perpendicularly Magnetized Ferromagnetic Layers Having an Oxide Interface Allowing for Improved Control of Oxidation

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Luc Thomas of San Jose CA (US)

Guenole Jan of San Jose CA (US)

Ru-Ying Tong of Los Gatos CA (US)

Perpendicularly Magnetized Ferromagnetic Layers Having an Oxide Interface Allowing for Improved Control of Oxidation - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240379270 titled 'Perpendicularly Magnetized Ferromagnetic Layers Having an Oxide Interface Allowing for Improved Control of Oxidation

The improved magnetic tunnel junction described in the patent application features two oxide interfaces on each side of a ferromagnetic layer, leading to higher perpendicular magnetic anisotropy (PMA) in the ferromagnetic layer. This novel stack structure allows for better control during the oxidation of the top oxide layer.

• The use of a ferromagnetic layer with multiple ferromagnetic sub-layers deposited in alternating sequence with non-magnetic layers enhances the performance of the magnetic tunnel junction.
• Non-magnetic layers with a thickness of 0.5 to 10 angstroms and a high resputtering rate result in a smoother top surface of the ferromagnetic layer, inhibiting crystallization of the sub-layers and preventing detrimental oxidation.
• The ferromagnetic layer can function as a free or reference layer in the magnetic tunnel junction.
• In an alternative embodiment, non-magnetic materials such as Mg, Al, Si, Ca, Sr, Ba, and B are embedded or doped in the ferromagnetic layer.

Potential Applications: - Data storage devices - Magnetic sensors - Spintronics applications

Problems Solved: - Enhanced control during oxidation of the top oxide layer - Prevention of detrimental oxidation of the ferromagnetic sub-layers - Improved performance of magnetic tunnel junctions

Benefits: - Higher perpendicular magnetic anisotropy - Smoother ferromagnetic layer top surface - Enhanced stability and reliability of magnetic tunnel junctions

Commercial Applications: Title: Advanced Magnetic Tunnel Junction Technology for Data Storage Devices This technology can be utilized in the development of high-performance data storage devices, magnetic sensors, and spintronics applications, catering to the growing demand for efficient and reliable magnetic storage solutions in various industries.

Questions about the technology: 1. How does the use of non-magnetic layers contribute to the improved performance of the magnetic tunnel junction? 2. What are the potential implications of embedding non-magnetic materials in the ferromagnetic layer for the functionality of the device?

Original Abstract Submitted

an improved magnetic tunnel junction with two oxide interfaces on each side of a ferromagnetic layer (fml) leads to higher pma in the fml. the novel stack structure allows improved control during oxidation of the top oxide layer. this is achieved by the use of a fml with a multiplicity of ferromagnetic sub-layers deposited in alternating sequence with one or more non-magnetic layers. the use of non-magnetic layers each with a thickness of 0.5 to 10 angstroms and with a high resputtering rate provides a smoother fml top surface, inhibits crystallization of the fml sub-layers, and reacts with oxygen to prevent detrimental oxidation of the adjoining ferromagnetic sub-layers. the fml can function as a free or reference layer in an mtj. in an alternative embodiment, the non-magnetic material such as mg, al, si, ca, sr, ba, and b is embedded by co-deposition or doped in the fml layer.