Taiwan semiconductor manufacturing company, ltd. (20240379183). METHOD FOR TESTING AND REPAIRING MEMORY DEVICE simplified abstract
Contents
METHOD FOR TESTING AND REPAIRING MEMORY DEVICE
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Po-Hao Lee of Hsinchu City (TW)
Yu-Der Chih of Hsin-Chu City (TW)
METHOD FOR TESTING AND REPAIRING MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240379183 titled 'METHOD FOR TESTING AND REPAIRING MEMORY DEVICE
The abstract describes a method for testing and repairing a memory device, specifically focusing on memory arrays with data cells and reference cells organized in rows and columns. The method involves row repair to replace defective reference cells with redundant cells and local reference current trimming to adjust the resistance state ratio of reference cells in each row.
- Memory device testing and repair method
- Focus on memory arrays with data and reference cells
- Row repair to replace defective reference cells with redundant cells
- Local reference current trimming to adjust resistance state ratio
- Aimed at improving memory device performance and reliability
Potential Applications: - Memory device manufacturing industry - Electronic device production - Quality control processes in technology companies
Problems Solved: - Addressing defects in memory devices - Enhancing data storage and retrieval efficiency - Improving overall device reliability
Benefits: - Increased memory device performance - Reduced likelihood of data loss - Enhanced quality control in manufacturing processes
Commercial Applications: Title: "Advanced Memory Device Testing and Repair Method" This technology could be utilized in the production of various electronic devices, such as smartphones, computers, and servers, to ensure high-quality memory performance and reliability. It could also be integrated into quality control processes in memory device manufacturing companies to streamline production and reduce defects.
Questions about Memory Device Testing and Repair Method: 1. How does the row repair process improve memory device reliability? The row repair process replaces defective reference cells with redundant cells, ensuring that the memory device continues to function properly even if some cells are faulty.
2. What are the potential cost savings associated with implementing the local reference current trimming technique? By adjusting the resistance state ratio of reference cells, the memory device can operate more efficiently, potentially reducing the need for frequent repairs or replacements.
Original Abstract Submitted
a method for testing and repairing a memory device is provided. the memory device includes a memory array having data cells and reference cells arranged along cell rows and cell columns. the data cells are configured to store data, and the reference cells are configured to generate a reference current for reading the data stored in the data cells. the method includes: performing a row repair, to test the reference cells in each cell row, and to replace the cell row containing at least one defective reference cell by a redundant cell row comprising additional data cells and additional reference cells; and performing a local reference current trimming, to modify a ratio of an amount of the reference cells programmed with a low resistance state over an amount of the reference cells programmed with a high resistance state for at least one of the cell rows.
