Taiwan semiconductor manufacturing company, ltd. (20240379161). SEMICONDUCTOR MEMORY DEVICES WITH WRAPPED WORD LINES simplified abstract
Contents
SEMICONDUCTOR MEMORY DEVICES WITH WRAPPED WORD LINES
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
SEMICONDUCTOR MEMORY DEVICES WITH WRAPPED WORD LINES - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240379161 titled 'SEMICONDUCTOR MEMORY DEVICES WITH WRAPPED WORD LINES
The abstract of this patent application describes a method for manufacturing a semiconductor device, involving the formation of various conductor structures and films to create a memory cell.
- Formation of a first memory cell with a conductor structure extending laterally.
- Creation of a memory film wrapping around the conductor structure.
- Formation of a semiconductor film wrapping around the memory film.
- Addition of a second conductor structure extending vertically.
- Connection of the second conductor structure to the semiconductor film.
- Formation of a third conductor structure and coupling it to the semiconductor film.
Potential Applications: - Memory storage devices - Semiconductor manufacturing industry
Problems Solved: - Efficient memory cell design - Enhanced semiconductor device performance
Benefits: - Improved memory cell functionality - Higher semiconductor device efficiency
Commercial Applications: - Memory chip production - Semiconductor device manufacturing
Questions about the technology: 1. How does this method improve semiconductor device performance? 2. What are the specific advantages of using this memory cell design in comparison to traditional methods?
Frequently Updated Research: - Ongoing advancements in semiconductor manufacturing techniques may impact the implementation of this method in future devices.
Original Abstract Submitted
a method for manufacturing a semiconductor device includes forming a first memory cell, which includes forming a first conductor structure extending along a lateral direction; forming a first memory film comprising a first portion wrapping around a first portion of the first conductor structure; forming a first semiconductor film wrapping around the first portion of the first memory film; forming a second conductor structure that extends along a vertical direction; coupling the second conductor structure to a first end portion of the first semiconductor film along the lateral direction; forming a third conductor structure extends along the vertical direction; and coupling the third conductor structure to a second end portion of the first semiconductor film along the lateral direction. the first conductor structure has a void.
