Taiwan semiconductor manufacturing company, ltd. (20240379155). NON-VOLATILE MEMORY BASED COMPUTE-IN-MEMORY CELL simplified abstract
Contents
NON-VOLATILE MEMORY BASED COMPUTE-IN-MEMORY CELL
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Zheng-Jun Lin of Taichung City (TW)
Chung-Cheng Chou of Hsinchu (TW)
NON-VOLATILE MEMORY BASED COMPUTE-IN-MEMORY CELL - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240379155 titled 'NON-VOLATILE MEMORY BASED COMPUTE-IN-MEMORY CELL
The memory device described in the patent application consists of a static random-access memory (SRAM) with two cross-coupled inverters and an access transistor connected to a word line. Additionally, the device includes logic gates connected to the SRAM and a non-volatile memory that stores data and can be read using the SRAM. The non-volatile memory is connected to the access transistor and the cross-coupled inverters.
- SRAM with two cross-coupled inverters and an access transistor
- Logic gates connected to the SRAM
- Non-volatile memory for storing data and reading through the SRAM
- Non-volatile memory connected to access transistor and cross-coupled inverters
Potential Applications: - Embedded systems - IoT devices - Consumer electronics
Problems Solved: - Providing a memory device with both volatile and non-volatile memory - Enhancing data storage and retrieval capabilities
Benefits: - Improved data retention - Faster access times - Enhanced reliability
Commercial Applications: Title: "Advanced Memory Devices for Enhanced Data Storage" This technology could be utilized in various commercial applications such as smartphones, tablets, and other electronic devices, improving their memory performance and reliability.
Questions about the technology: 1. How does the integration of non-volatile memory with SRAM benefit the overall performance of the memory device? 2. What are the potential challenges in implementing this memory device in real-world applications?
Original Abstract Submitted
a memory device including a static random-access memory that includes two cross-coupled inverters and an access transistor having a gate connected to a word line. the memory device further includes one or more logic gates electrically coupled to the static random-access memory, and a non-volatile memory electrically coupled to the static random-access memory and configured to store data and be read using the static random-access memory, wherein the non-volatile memory is connected on one side to the access transistor and on another side to the two cross-coupled inverters.
