Taiwan semiconductor manufacturing company, ltd. (20240377743). BOTTOM ANTIREFLECTIVE COATING MATERIALS simplified abstract

BOTTOM ANTIREFLECTIVE COATING MATERIALS

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Chien-Chih Chen of Taipei City (TW)

Ching-Yu Chang of Yilang County (TW)

BOTTOM ANTIREFLECTIVE COATING MATERIALS - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240377743 titled 'BOTTOM ANTIREFLECTIVE COATING MATERIALS

The method described in the abstract involves a process for creating patterns on a substrate using a photoresist layer and an underlayer with specific chemical components.

• The underlayer consists of a polymer backbone, a polarity switchable group, a cross-linkable group, and a photoacid generator.
• The polarity switchable group includes a first end group, a second end group with fluorine, and an acid labile group.
• Exposing the underlayer to radiation decomposes the photoacid generator, generating an acidity moiety that detaches the second end group during baking.

Potential Applications: - Semiconductor manufacturing - Microelectronics fabrication - Photolithography processes

Problems Solved: - Enhancing pattern transfer accuracy - Improving resolution in microfabrication - Increasing efficiency in semiconductor production

Benefits: - Higher precision in pattern creation - Enhanced control over feature sizes - Improved overall quality of microelectronic devices

Commercial Applications: Title: Advanced Photolithography Process for Semiconductor Manufacturing This technology could revolutionize the way microelectronics are produced, leading to more efficient and precise manufacturing processes in the semiconductor industry.

Questions about the technology: 1. How does the polarity switchable group contribute to the effectiveness of the underlayer? 2. What are the advantages of using a photoacid generator in the underlayer for pattern transfer?

Frequently Updated Research: Stay updated on the latest advancements in photolithography techniques and materials to further improve the efficiency and accuracy of microfabrication processes.

Original Abstract Submitted

a method according to the present disclosure includes providing a substrate, depositing an underlayer over the substrate, depositing a photoresist layer over the underlayer, exposing a portion of the photoresist layer and a portion of the underlayer to a radiation source according to a pattern, baking the photoresist layer and underlayer, and developing the exposed portion of the photoresist layer to transfer the pattern to the photoresist layer. the underlayer includes a polymer backbone, a polarity switchable group, a cross-linkable group bonded to the polymer backbone, and photoacid generator. the polarity switchable group includes a first end group bonded to the polymer backbone, a second end group including fluorine, and an acid labile group bonded between the first end group and the second end group. the exposing decomposes the photoacid generator to generate an acidity moiety that detaches the second end group from the polymer backbone during the baking.