Taiwan semiconductor manufacturing company, ltd. (20240377735). EUV METALLIC RESIST PERFORMANCE ENHANCEMENT VIA ADDITIVES simplified abstract

EUV METALLIC RESIST PERFORMANCE ENHANCEMENT VIA ADDITIVES

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

An-Ren Zi of Hsinchu City (TW)

Joy Cheng of Taoyuan City (TW)

Ching-Yu Chang of Yilang County (TW)

EUV METALLIC RESIST PERFORMANCE ENHANCEMENT VIA ADDITIVES - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240377735 titled 'EUV METALLIC RESIST PERFORMANCE ENHANCEMENT VIA ADDITIVES

The abstract describes a patent application for a photoresist layer on a wafer, including metallic photoresist material and additives, used in extreme ultraviolet lithography.

• The photoresist layer contains one or more additives such as a solvent with a boiling point above 150 degrees Celsius, a photo acid generator, a photo base generator, a quencher, a photo-decomposed base, a thermal acid generator, or a photo sensitivity cross-linker.

Key Features and Innovation:

• Utilization of metallic photoresist material in extreme ultraviolet lithography.
• Addition of various additives to enhance the performance of the photoresist layer.
• Improving the quality and precision of lithography processes.

Potential Applications:

• Semiconductor manufacturing
• Nanotechnology research
• Advanced imaging technologies

Problems Solved:

• Enhancing the resolution and accuracy of lithography processes.
• Improving the efficiency of semiconductor manufacturing.
• Addressing challenges in nanoscale patterning.

Benefits:

• Higher quality and precision in lithography.
• Increased efficiency in semiconductor fabrication.
• Enhanced capabilities in nanotechnology research.

Commercial Applications:

• Advanced semiconductor fabrication processes
• High-resolution imaging technologies
• Research and development in nanoscale materials

Prior Art: Prior art related to this technology may include patents or research papers on photoresist materials and lithography processes using additives for improved performance.

Frequently Updated Research: Stay updated on the latest advancements in photoresist materials, lithography techniques, and additive formulations for semiconductor manufacturing and nanotechnology applications.

Questions about the technology: 1. How does the addition of additives improve the performance of the photoresist layer in extreme ultraviolet lithography? 2. What are the potential challenges in implementing this technology in large-scale semiconductor manufacturing processes?

Original Abstract Submitted

a photoresist layer is formed over a wafer. the photoresist layer includes a metallic photoresist material and one or more additives. an extreme ultraviolet (euv) lithography process is performed using the photoresist layer. the one or more additives include: a solvent having a boiling point greater than about 150 degrees celsius, a photo acid generator, a photo base generator, a quencher, a photo de-composed base, a thermal acid generator, or a photo sensitivity cross-linker.