Taiwan semiconductor manufacturing company, ltd. (20240377731). EXTREME ULTRAVIOLET PHOTOLITHOGRAPHY METHOD WITH DEVELOPER COMPOSITION simplified abstract
Contents
EXTREME ULTRAVIOLET PHOTOLITHOGRAPHY METHOD WITH DEVELOPER COMPOSITION
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
An-Ren Zi of Hsinchu City (TW)
Joy Cheng of Taoyuan City (TW)
Ching-Yu Chang of Yilang County (TW)
Chin-Hsiang Lin of Hsin-Chu (TW)
EXTREME ULTRAVIOLET PHOTOLITHOGRAPHY METHOD WITH DEVELOPER COMPOSITION - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240377731 titled 'EXTREME ULTRAVIOLET PHOTOLITHOGRAPHY METHOD WITH DEVELOPER COMPOSITION
The present disclosure describes a method for lithography patterning involving a metal-containing chemical in the photoresist layer.
- Forming a photoresist layer with a metal-containing chemical on a substrate.
- Exposing the photoresist layer to create a pattern.
- Developing the photoresist layer using a developer that includes a chemical additive to remove metal residuals.
- The method results in a patterned resist layer with improved metal residue removal.
Potential Applications: - Semiconductor manufacturing - Microelectronics industry - Nanotechnology research
Problems Solved: - Enhanced precision in lithography patterning - Reduction of metal residuals in the photoresist layer
Benefits: - Improved quality of patterned resist layers - Increased efficiency in manufacturing processes
Commercial Applications: Title: Advanced Lithography Patterning Method for Semiconductor Manufacturing This technology can be used in the production of microchips, sensors, and other electronic devices, improving their performance and reliability in various industries.
Questions about Lithography Patterning Method: 1. How does the use of a metal-containing chemical in the photoresist layer impact the patterning process? - The metal-containing chemical helps enhance the resolution and accuracy of the lithography patterning by enabling better control over the development process.
2. What are the advantages of using a developer with a chemical additive to remove metal residuals? - The chemical additive in the developer aids in effectively eliminating metal residuals from the photoresist layer, resulting in cleaner and more precise patterns.
Original Abstract Submitted
the present disclosure provides a method for lithography patterning in accordance with some embodiments. the method includes forming a photoresist layer over a substrate, wherein the photoresist layer includes a metal-containing chemical; performing an exposing process to the photoresist layer; and performing a first developing process to the photoresist layer using a first developer, thereby forming a patterned resist layer, wherein the first developer includes a first solvent and a chemical additive to remove metal residuals generated from the metal-containing chemical.
