Taiwan semiconductor manufacturing company, ltd. (20240377724). PELLICLE FOR AN EUV LITHOGRAPHY MASK AND A METHOD OF MANUFACTURING THEREOF simplified abstract
Contents
PELLICLE FOR AN EUV LITHOGRAPHY MASK AND A METHOD OF MANUFACTURING THEREOF
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Yun-Yue Lin of Hsinchu City (TW)
PELLICLE FOR AN EUV LITHOGRAPHY MASK AND A METHOD OF MANUFACTURING THEREOF - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240377724 titled 'PELLICLE FOR AN EUV LITHOGRAPHY MASK AND A METHOD OF MANUFACTURING THEREOF
The abstract of the patent application describes a pellicle for an EUV photo mask, consisting of a base membrane layer, a core layer, and one or more metallic layers.
- Simplified Explanation:
- Pellicle for EUV photo mask - Base membrane layer, core layer, metallic layers
Key Features and Innovation: - Pellicle design for EUV photo masks - Enhanced protection and durability - Improved performance in extreme conditions
Potential Applications: - Semiconductor manufacturing - Photolithography processes - Advanced technology research
Problems Solved: - Protects EUV photo masks from damage - Ensures high-quality imaging - Increases longevity of photo masks
Benefits: - Improved efficiency in semiconductor production - Cost-effective solution for mask protection - Enhanced performance in EUV lithography
Commercial Applications: - Semiconductor industry - Research institutions - Mask manufacturing companies
Questions about Pellicle for EUV Photo Mask: 1. How does the pellicle design impact the performance of EUV photo masks? 2. What are the specific advantages of using metallic layers in the pellicle design?
Frequently Updated Research: - Ongoing studies on pellicle materials and designs - Research on improving EUV lithography processes
Overall, the pellicle for an EUV photo mask offers advanced protection and performance benefits for semiconductor manufacturing and research applications.
Original Abstract Submitted
a pellicle for an euv photo mask includes a base membrane layer, a core layer disposed over the base membrane layer and one or more metallic layers disposed over the core layer.
