Taiwan semiconductor manufacturing company, ltd. (20240377720). EUV Lithography Mask With A Porous Reflective Multilayer Structure simplified abstract
Contents
EUV Lithography Mask With A Porous Reflective Multilayer Structure
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Chih-Tsung Shih of Hsinchu City (TW)
Shih-Chang Shih of Hsinchu (TW)
Li-Jui Chen of Hsinchu City (TW)
Po-Chung Cheng of Chiayi County (TW)
EUV Lithography Mask With A Porous Reflective Multilayer Structure - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240377720 titled 'EUV Lithography Mask With A Porous Reflective Multilayer Structure
The abstract of the patent application describes a lithography mask that includes a substrate made of a low thermal expansion material (LTEM) and a reflective structure with a porous second layer.
- The lithography mask consists of a substrate containing a low thermal expansion material (LTEM) and a reflective structure.
- The reflective structure includes a first layer and a second layer, with at least the second layer being porous.
- The mask is formed by creating a multilayer reflective structure over the LTEM substrate, with repeating film pairs of first and porous second layers.
- A capping layer is added over the multilayer reflective structure, followed by an absorber layer.
Potential Applications: - Semiconductor manufacturing - Photolithography processes - Optical imaging systems
Problems Solved: - Improving the performance and accuracy of lithography masks - Enhancing the reflective properties of the mask
Benefits: - Increased precision in semiconductor manufacturing - Enhanced image resolution in optical systems
Commercial Applications: Title: Advanced Lithography Masks for Semiconductor Manufacturing This technology can be used in the production of high-quality semiconductor devices, improving overall performance and efficiency in the industry.
Questions about Lithography Masks: 1. How does the porous second layer in the reflective structure contribute to the performance of the lithography mask?
- The porous second layer helps to enhance the reflective properties of the mask, improving its accuracy and efficiency.
2. What are the key advantages of using a low thermal expansion material (LTEM) substrate in lithography masks?
- LTEM substrates provide stability and precision, crucial for maintaining the integrity of the mask during manufacturing processes.
Original Abstract Submitted
a lithography mask includes a substrate that contains a low thermal expansion material (ltem). the lithography mask also includes a reflective structure disposed over the substrate. the reflective structure includes a first layer and a second layer disposed over the first layer. at least the second layer is porous. the mask is formed by forming a multilayer reflective structure over the ltem substrate, including forming a plurality of repeating film pairs, where each film pair includes a first layer and a porous second layer. a capping layer is formed over the multilayer reflective structure. an absorber layer is formed over the capping layer.
