Taiwan semiconductor manufacturing company, ltd. (20240377720). EUV Lithography Mask With A Porous Reflective Multilayer Structure simplified abstract

EUV Lithography Mask With A Porous Reflective Multilayer Structure

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Chih-Tsung Shih of Hsinchu City (TW)

Shih-Chang Shih of Hsinchu (TW)

Li-Jui Chen of Hsinchu City (TW)

Po-Chung Cheng of Chiayi County (TW)

EUV Lithography Mask With A Porous Reflective Multilayer Structure - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240377720 titled 'EUV Lithography Mask With A Porous Reflective Multilayer Structure

The abstract of the patent application describes a lithography mask that includes a substrate made of a low thermal expansion material (LTEM) and a reflective structure with a porous second layer.

• The lithography mask consists of a substrate containing a low thermal expansion material (LTEM) and a reflective structure.
• The reflective structure includes a first layer and a second layer, with at least the second layer being porous.
• The mask is formed by creating a multilayer reflective structure over the LTEM substrate, with repeating film pairs of first and porous second layers.
• A capping layer is added over the multilayer reflective structure, followed by an absorber layer.

Potential Applications: - Semiconductor manufacturing - Photolithography processes - Optical imaging systems

Problems Solved: - Improving the performance and accuracy of lithography masks - Enhancing the reflective properties of the mask

Benefits: - Increased precision in semiconductor manufacturing - Enhanced image resolution in optical systems

Commercial Applications: Title: Advanced Lithography Masks for Semiconductor Manufacturing This technology can be used in the production of high-quality semiconductor devices, improving overall performance and efficiency in the industry.

Questions about Lithography Masks: 1. How does the porous second layer in the reflective structure contribute to the performance of the lithography mask?

  - The porous second layer helps to enhance the reflective properties of the mask, improving its accuracy and efficiency.

2. What are the key advantages of using a low thermal expansion material (LTEM) substrate in lithography masks?

  - LTEM substrates provide stability and precision, crucial for maintaining the integrity of the mask during manufacturing processes.

Original Abstract Submitted

a lithography mask includes a substrate that contains a low thermal expansion material (ltem). the lithography mask also includes a reflective structure disposed over the substrate. the reflective structure includes a first layer and a second layer disposed over the first layer. at least the second layer is porous. the mask is formed by forming a multilayer reflective structure over the ltem substrate, including forming a plurality of repeating film pairs, where each film pair includes a first layer and a porous second layer. a capping layer is formed over the multilayer reflective structure. an absorber layer is formed over the capping layer.