Taiwan semiconductor manufacturing company, ltd. (20240377661). INTEGRATED PHOTODETECTOR WITH EMBEDDED SEMICONDUCTOR REGION simplified abstract
Contents
INTEGRATED PHOTODETECTOR WITH EMBEDDED SEMICONDUCTOR REGION
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Tai-Chun Huang of New Taipei City (TW)
Stefan Rusu of Sunnyvale CA (US)
INTEGRATED PHOTODETECTOR WITH EMBEDDED SEMICONDUCTOR REGION - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240377661 titled 'INTEGRATED PHOTODETECTOR WITH EMBEDDED SEMICONDUCTOR REGION
The present disclosure describes an optical module with a waveguide that includes a rib, a first protrusion, and a second protrusion on opposite sides of the rib. The waveguide is made of a first semiconductor material, and a photodetector with a pn junction is located in the rib. The p-type region of the pn junction extends to the first protrusion, while the n-type region extends to the second protrusion. Heavily doped p and n type contact regions are accommodated in the first and second protrusions, and a semiconductor region with a second semiconductor material is on the pn junction to enhance quantum efficiency.
- Waveguide with rib, first protrusion, and second protrusion
- Photodetector with pn junction in the rib
- P-type region extending to the first protrusion and n-type region extending to the second protrusion
- Heavily doped p and n type contact regions in the protrusions
- Semiconductor region with a second semiconductor material for enhanced quantum efficiency
Potential Applications: - Optical communication systems - Photonic integrated circuits - Sensing applications
Problems Solved: - Improved quantum efficiency in photodetectors - Enhanced performance in optical modules
Benefits: - Higher sensitivity in detecting optical signals - Better overall performance in optical communication systems
Commercial Applications: Title: Enhanced Photodetectors for Optical Communication Systems This technology can be used in telecommunications, data centers, and other industries requiring high-performance optical modules for data transmission.
Questions about Enhanced Photodetectors for Optical Communication Systems:
1. How does the use of a second semiconductor material improve quantum efficiency in the photodetector? 2. What are the potential challenges in integrating this technology into existing optical communication systems?
Original Abstract Submitted
in some embodiments, the present disclosure provides an optical module. a waveguide includes a rib, and further includes a first protrusion and a second protrusion respectively on opposite sides of the rib. further, the waveguide is formed of a first semiconductor material. a photodetector is in the waveguide and comprises a pn junction in the rib. a p type region of the pn junction extends to the first protrusion, and an n type region of the pn junction extends to the second protrusion. further, the first and second protrusions accommodate heavily doped p and n type contact regions. a semiconductor region is on the pn junction. the semiconductor region comprises a second semiconductor material different the first semiconductor material. for example, the second semiconductor material may have a smaller bandgap than the first semiconductor material to enhance quantum efficiency.
