Taiwan semiconductor manufacturing company, ltd. (20240377581). CLADDING STRUCTURE FOR SEMICONDUCTOR WAVEGUIDE simplified abstract

CLADDING STRUCTURE FOR SEMICONDUCTOR WAVEGUIDE

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Chan-Hong Chern of Palo Alto CA (US)

CLADDING STRUCTURE FOR SEMICONDUCTOR WAVEGUIDE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240377581 titled 'CLADDING STRUCTURE FOR SEMICONDUCTOR WAVEGUIDE

The semiconductor structure in this patent application consists of a semiconductor waveguide layer positioned over a second dielectric layer and between the sidewalls of a first dielectric layer. A first cladding layer is located between the sidewalls of the first dielectric layer and directly above the semiconductor waveguide layer. Additionally, a second cladding layer is situated between the sidewalls of the second dielectric layer and directly below the semiconductor waveguide layer.

• The refractive index difference between the semiconductor waveguide layer and the first cladding layer is smaller than the difference between the refractive index of the semiconductor waveguide layer and the first dielectric layer.
• Similarly, the refractive index difference between the semiconductor waveguide layer and the second cladding layer is smaller than the difference between the refractive index of the semiconductor waveguide layer and the second dielectric layer.

Potential Applications: - Optical communication systems - Photonic integrated circuits - Fiber optic networks

Problems Solved: - Improved light confinement in semiconductor waveguides - Enhanced optical signal transmission efficiency

Benefits: - Higher performance in optical devices - Increased data transmission speeds - Enhanced signal quality

Commercial Applications: Title: Enhanced Semiconductor Waveguide Structure for Optical Communication Systems This technology can be utilized in the development of advanced optical communication systems, photonic integrated circuits, and fiber optic networks, leading to faster data transmission speeds and improved signal quality in various commercial applications.

Questions about the technology: 1. How does the refractive index difference between the semiconductor waveguide layer and the cladding layers impact the performance of the semiconductor structure? 2. What are the specific advantages of using this semiconductor waveguide structure in optical communication systems?

Original Abstract Submitted

a semiconductor structure including a semiconductor waveguide layer over a second dielectric layer and between sidewalls of a first dielectric layer. a first cladding layer is between the sidewalls of the first dielectric layer and directly over the semiconductor waveguide layer. a second cladding layer is between sidewalls of the second dielectric layer and directly under the semiconductor waveguide layer. a difference between a refractive index of the semiconductor waveguide layer and a refractive index of the first cladding layer is less than a difference between the refractive index of the semiconductor waveguide layer and a refractive index of the first dielectric layer. a difference between the refractive index of the semiconductor waveguide layer and a refractive index of the second cladding layer is less than a difference between the refractive index of the semiconductor waveguide layer and a refractive index of the second dielectric layer.