Taiwan semiconductor manufacturing company, ltd. (20240377352). HIGH SENSITIVITY ISFET SENSOR simplified abstract
Contents
HIGH SENSITIVITY ISFET SENSOR
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Katherine H. Chiang of New Taipei City (TW)
Jui-Cheng Huang of Hsinchu City (TW)
Tung-Tsun Chen of Hsinchu City (TW)
Pei-Wen Liu of Hsinchu City (TW)
HIGH SENSITIVITY ISFET SENSOR - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240377352 titled 'HIGH SENSITIVITY ISFET SENSOR
Simplified Explanation: The patent application describes an ion-sensitive field-effect transistor with enhanced sensitivity, featuring a unique configuration of source/drain regions, gate electrodes, interconnect structures, passivation layers, and sensing layers.
- The substrate includes pairs of first and second source/drain regions, with first and second gate electrodes positioned between them.
- An interconnect structure shorts the second source/drain regions and gate electrode together, enhancing sensitivity.
- Passivation layers define wells overlying the gate electrodes, with a sensing layer lining the wells.
- Sensing probes are located in one well but not the other, providing differential sensing capabilities.
Key Features and Innovation:
- Enhanced sensitivity in an ion-sensitive field-effect transistor.
- Unique configuration of source/drain regions, gate electrodes, and interconnect structures.
- Passivation layers and sensing probes for improved sensing capabilities.
Potential Applications: The technology can be applied in various fields such as medical diagnostics, environmental monitoring, and chemical analysis.
Problems Solved:
- Improved sensitivity in ion-sensitive field-effect transistors.
- Enhanced precision in detecting ion concentrations.
Benefits:
- Increased accuracy in ion detection.
- Potential for real-time monitoring of ion levels.
- Enhanced performance in various sensing applications.
Commercial Applications: Potential commercial applications include medical devices, environmental monitoring systems, and laboratory equipment for chemical analysis.
Prior Art: Readers can explore prior research on ion-sensitive field-effect transistors, sensing technologies, and semiconductor device innovations.
Frequently Updated Research: Stay informed about advancements in ion-sensitive field-effect transistors, sensing technologies, and semiconductor materials research.
Questions about Ion-Sensitive Field-Effect Transistors: 1. How do ion-sensitive field-effect transistors compare to other types of sensors in terms of sensitivity and accuracy? 2. What are the key factors influencing the performance of ion-sensitive field-effect transistors in real-world applications?
Original Abstract Submitted
various embodiments of the present application are directed towards an ion-sensitive field-effect transistor for enhanced sensitivity. in some embodiments, a substrate comprises a pair of first source/drain regions and a pair of second source/drain regions. further, a first gate electrode and a second gate electrode underlie the substrate. the first gate electrode is laterally between the first source/drain regions, and the second gate electrode is laterally between the second source/drain regions. an interconnect structure underlies the substrate and defines conductive paths electrically shorting the second source/drain regions and the second gate electrode together. a passivation layer is over the substrate and defines a first well and a second well. the first and second wells respectively overlie the first and second gate electrodes, and a sensing layer lines the substrate in the first and second wells. in some embodiments, sensing probes are in the first well, but not the second well.
