Taiwan semiconductor manufacturing company, ltd. (20240375943). DIELECTRIC PROTECTION LAYER CONFIGURED TO INCREASE PERFORMANCE OF MEMS DEVICE simplified abstract
Contents
DIELECTRIC PROTECTION LAYER CONFIGURED TO INCREASE PERFORMANCE OF MEMS DEVICE
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Wen-Chuan Tai of Hsinchu City (TW)
Hsiang-Fu Chen of Zhubei City (TW)
Chia-Ming Hung of Taipei City (TW)
I-Hsuan Chiu of Taipei City (TW)
DIELECTRIC PROTECTION LAYER CONFIGURED TO INCREASE PERFORMANCE OF MEMS DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240375943 titled 'DIELECTRIC PROTECTION LAYER CONFIGURED TO INCREASE PERFORMANCE OF MEMS DEVICE
The abstract of this patent application describes an integrated chip with various layers including an interconnect structure, a semiconductor substrate, an upper dielectric structure, a microelectromechanical system (MEMS) substrate, a movable membrane, a cavity electrode, stopper structures, and a dielectric protection layer.
- The integrated chip includes an interconnect structure overlying a semiconductor substrate.
- An upper dielectric structure and a MEMS substrate are also present.
- A cavity is defined between the MEMS substrate and the upper dielectric structure.
- The MEMS substrate features a movable membrane over the cavity.
- A cavity electrode and stopper structures are disposed within the cavity.
- A dielectric protection layer with a higher dielectric constant than the upper dielectric structure is present.
Potential Applications: - This technology can be used in the development of advanced sensors. - It can be applied in the manufacturing of high-performance microelectromechanical systems. - The integrated chip could find applications in the aerospace industry for precise measurements.
Problems Solved: - Provides a compact and efficient design for integrated chips. - Enhances the performance and functionality of MEMS devices. - Offers improved protection and stability for the movable membrane.
Benefits: - Increased sensitivity and accuracy in sensing applications. - Enhanced reliability and durability of MEMS devices. - Potential for miniaturization and cost-effectiveness in chip manufacturing.
Commercial Applications: Title: Advanced MEMS Integrated Chip Technology for Sensing Applications This technology can be utilized in the development of high-precision sensors for industries such as aerospace, automotive, and healthcare. The compact design and improved functionality make it a valuable asset in the production of cutting-edge MEMS devices.
Questions about MEMS Integrated Chip Technology: 1. How does the dielectric protection layer contribute to the overall performance of the MEMS device? The dielectric protection layer enhances the stability and reliability of the movable membrane by providing a higher dielectric constant than the upper dielectric structure, thus improving the overall functionality of the integrated chip.
2. What are the potential challenges in scaling up this technology for mass production? Scaling up this technology for mass production may pose challenges in maintaining uniformity and precision across a large number of integrated chips. Calibration and quality control processes would need to be optimized to ensure consistent performance in commercial applications.
Original Abstract Submitted
various embodiments of the present disclosure are directed towards an integrated chip including an interconnect structure overlying a semiconductor substrate. an upper dielectric structure overlies the interconnect structure. a microelectromechanical system (mems) substrate overlies the upper dielectric structure. a cavity is defined between the mems substrate and the upper dielectric structure. the mems substrate comprises a movable membrane over the cavity. a cavity electrode is disposed in the upper dielectric structure and underlies the cavity. a plurality of stopper structures is disposed in the cavity between the movable membrane and the cavity electrode. a dielectric protection layer is disposed along a top surface of the cavity electrode. the dielectric protection layer has a greater dielectric constant than the upper dielectric structure.
