Taiwan semiconductor manufacturing company, ltd. (20240375938). MICROELECTROMECHANICAL SYSTEMS DEVICE HAVING IMPROVED SIGNAL DISTORTION simplified abstract

MICROELECTROMECHANICAL SYSTEMS DEVICE HAVING IMPROVED SIGNAL DISTORTION

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Ting-Jung Chen of Kaohsiung City (TW)

MICROELECTROMECHANICAL SYSTEMS DEVICE HAVING IMPROVED SIGNAL DISTORTION - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240375938 titled 'MICROELECTROMECHANICAL SYSTEMS DEVICE HAVING IMPROVED SIGNAL DISTORTION

The abstract of this patent application describes a semiconductor device with a substrate, a cavity in the substrate, and a microelectromechanical system (MEMS) layer over the substrate. The MEMS layer includes a movable diaphragm over the cavity, with a flat central region and a corrugated peripheral region.

• The semiconductor device includes a substrate with a cavity for housing a MEMS layer.
• The MEMS layer features a movable diaphragm that is flat in the central region and corrugated in the peripheral region.

Potential Applications: - Pressure sensors - Accelerometers - Gyroscopes

Problems Solved: - Accurate sensing of pressure changes - Precise measurement of acceleration - Reliable detection of rotational motion

Benefits: - Enhanced sensitivity - Improved accuracy - Compact design

Commercial Applications: Title: Advanced MEMS Pressure Sensors for IoT Devices This technology can be utilized in various industries such as automotive, aerospace, and consumer electronics for applications requiring precise pressure sensing capabilities.

Questions about MEMS Pressure Sensors: 1. How do MEMS pressure sensors compare to traditional pressure sensing technologies? MEMS pressure sensors offer higher sensitivity and accuracy compared to traditional technologies due to their compact design and precise diaphragm movement. 2. What are the key factors influencing the performance of MEMS pressure sensors? The performance of MEMS pressure sensors is influenced by factors such as diaphragm design, material properties, and signal processing algorithms.

Original Abstract Submitted

various embodiments of the present disclosure are directed towards a semiconductor device. the semiconductor device comprises a substrate. a cavity is disposed in the substrate. a microelectromechanical system (mems) layer is disposed over the substrate. the mems layer comprises a movable diaphragm disposed over the cavity. the movable diaphragm comprises a central region and a peripheral region. the movable diaphragm is flat in the central region of the movable diaphragm. the movable diaphragm is corrugated in the peripheral region of the movable diaphragm.