Taiwan semiconductor manufacturing company, ltd. (20240375146). Transducer Device and Method of Manufacture simplified abstract
Contents
Transducer Device and Method of Manufacture
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Transducer Device and Method of Manufacture - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240375146 titled 'Transducer Device and Method of Manufacture
The method described in the abstract involves forming a transducer by depositing a first dielectric layer on a first electrode, patterning the first dielectric layer to create different densities of protrusions in different regions, and bonding the first dielectric layer to a second electrode using a second dielectric layer with sidewalls that define a cavity.
- The method involves depositing a first dielectric layer on a first electrode.
- The first dielectric layer is patterned to form protrusions with different densities in different regions.
- A second dielectric layer is used to bond the first dielectric layer to a second electrode.
- The sidewalls of the second dielectric layer define a cavity where the protrusions are located.
Potential Applications: - This technology could be used in the manufacturing of transducers for various electronic devices. - It may find applications in sensors, actuators, and other devices that require precise control of electrical signals.
Problems Solved: - The method allows for the creation of transducers with tailored densities of protrusions in different regions, enabling fine-tuning of device performance. - It provides a way to bond electrodes with dielectric layers in a controlled manner, ensuring proper functionality of the transducer.
Benefits: - Enhanced control over the properties of transducers. - Improved performance and efficiency of electronic devices. - Potential for customization and optimization of device characteristics.
Commercial Applications: Title: Advanced Transducer Manufacturing Method for Electronic Devices This technology could be utilized in the production of sensors, actuators, and other electronic devices where precise control of electrical signals is crucial. The ability to tailor the densities of protrusions in different regions allows for optimized device performance, making it attractive for industries requiring high-performance electronic components.
Questions about Transducer Formation: 1. How does the method of patterning the dielectric layer impact the performance of the transducer? - The method of patterning allows for the customization of the transducer's properties, such as sensitivity and response time, by controlling the density of protrusions in different regions. 2. What are the potential challenges in scaling up this manufacturing method for mass production? - Scaling up the manufacturing process may require optimization of patterning techniques and materials to ensure consistent and reliable performance across a large number of devices.
Original Abstract Submitted
a method of forming a transducer includes depositing a first dielectric layer on a first electrode, patterning the first dielectric layer to form a plurality of first protrusions in a first region and a plurality of second protrusions in a second region, where a density of the plurality of first protrusions in the first region is different from a density of the plurality of second protrusions in the second region, and bonding the first dielectric layer to a second electrode using a second dielectric layer, where sidewalls of the second dielectric layer define a cavity disposed between the first electrode and the second electrode, and where the plurality of first protrusions and the plurality of second protrusions are disposed in the cavity.
