Samsung electronics co., ltd. (20240381782). MAGNETORESISTIVE DEVICES AND SEMICONDUCTOR DEVICES simplified abstract
Contents
MAGNETORESISTIVE DEVICES AND SEMICONDUCTOR DEVICES
Organization Name
Inventor(s)
Shigeki Takahashi of Yokohama-shi (JP)
Yoshiyuki Hirayama of Yokohama-shi (JP)
MAGNETORESISTIVE DEVICES AND SEMICONDUCTOR DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240381782 titled 'MAGNETORESISTIVE DEVICES AND SEMICONDUCTOR DEVICES
Simplified Explanation:
This patent application describes a magnetoresistive device and a semiconductor device with improved magnetic properties. The magnetoresistive device includes various layers and elements to enhance its performance.
- The magnetoresistive device consists of an SOT electrode layer, a metal oxide layer, a first nonmagnetic layer, and a magnetic tunnel junction element.
- The SOT electrode layer contains BiSb, while the metal oxide layer contains metal oxide.
- The first nonmagnetic layer includes an amorphous material, and crystals in different layers have different rotational symmetries.
Key Features and Innovation:
- Incorporation of an SOT electrode layer with BiSb.
- Utilization of a metal oxide layer with metal oxide.
- Inclusion of a first nonmagnetic layer containing an amorphous material.
- Integration of crystals with different rotational symmetries in various layers.
Potential Applications:
This technology can be applied in data storage devices, magnetic sensors, and magnetic random-access memory (MRAM) systems.
Problems Solved:
- Enhanced magnetic properties in semiconductor devices.
- Improved performance and efficiency in magnetoresistive devices.
Benefits:
- Increased data storage capacity.
- Enhanced sensitivity in magnetic sensors.
- Improved speed and reliability in MRAM systems.
Commercial Applications:
Potential commercial applications include the manufacturing of high-capacity hard drives, advanced magnetic sensors for industrial use, and next-generation MRAM systems for consumer electronics.
Questions about Magnetoresistive Devices:
1. How does the incorporation of different rotational symmetries in crystals improve the performance of the magnetoresistive device? 2. What are the specific advantages of using an amorphous material in the first nonmagnetic layer of the device?
Original Abstract Submitted
a magnetoresistive device and a semiconductor device in which magnetic properties may be improved are provided. a magnetoresistive device includes an sot electrode layer, a metal oxide layer, a first nonmagnetic layer, and a magnetic tunnel junction element including a first magnetic layer, a second nonmagnetic layer, and a second magnetic layer. the sot electrode layer includes bisb, the metal oxide layer includes metal oxide, the first nonmagnetic layer at least partially includes an amorphous material, and a crystal included in the sot electrode layer and a crystal included in the first magnetic layer have different rotational symmetries to a stacking direction thereof.
